Energetics of {105}-faceted Ge nanowires on Si(001): An atomistic calculation of edge contributions

C. M. Retford*, M. Asta, Michael J Miksis, Peter W Voorhees, E. B. Webb

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

Heteroepitaxial growth in the GeSi (001) system is known to lead to the formation of pyramid-like "hut" islands with {105}-oriented facets. Recent calculations of island formation energies in this system have suggested that edge energies lead to an important contribution to the barrier to island formation at small sizes. Here we provide an independent calculation of the magnitude of the average edge energy for GeSi (001) by matching the results of atomistic simulations to continuum theory for the energy of faceted surfaces. We consider an infinitely long Ge island, or wire, bounded by {105} facets with the recently proposed rebonded-step-model reconstruction, on a (001) wetting-layer terrace with the 2×8 dimer-vacancy-line reconstruction. To perform these calculations we derive models for edge structures between {105} facets and between {105} and (001) facets, leading in both cases to atomic coordinations with no more than one dangling bond per atom. For these model edge structures we obtain an average value for the edge energy on the order of 10 meV.

Original languageEnglish (US)
Article number075311
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number7
DOIs
StatePublished - Feb 8 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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