Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO 3 buffer layer

Xin Ge Yu, Jun Sheng Yu*, Wei Huang, Hong Juan Zeng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A top-contact organic field-effect transistor (OFET) is fabricated by adopting a pentacene/1,1′-bis(di-4-tolylaminophenyl) cyclohexane (TAPC) heterojunction structure and inserting an MoO 3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage, are all significantly improved by introducing the MoO 3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO 3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.

Original languageEnglish (US)
Article number117307
JournalChinese Physics B
Volume21
Issue number11
DOIs
StatePublished - Nov 1 2012

Keywords

  • contact resistance
  • heterojunction structure
  • MoO buffer layer
  • organic field-effect transistor (OFET)

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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