Enhanced conductivity along lateral homojunction interfaces of atomically thin semiconductors

Ying Jia, Teodor K. Stanev, Erik J. Lenferink, Nathaniel P. Stern*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS2, the thickness-dependent band structure implies the possibility of band realignment and a new interface charge state with properties distinct from the isolated layers. In this report, we probe the interface charge state using scanning photocurrent microscopy and gate-dependent transport with source-drain bias applied along the interface. Enhanced photoresponse observed at the interface is attributed to band bending. The effective conductivity of a material with a monolayer-multilayer interface of MoS2 is demonstrated to be higher than that of independent monolayers or multilayers of MoS2. A classic heterostructure model is constructed to interpret the electrical properties at the interface. Our work reveals that the band engineering at the transition metal dichalcogenides monolayer/multilayer interfaces can enhance the longitudinal conductance and field-effect mobility of the composite monolayer and multilayer devices.

Original languageEnglish (US)
Article number021012
Journal2D Materials
Volume4
Issue number2
DOIs
StatePublished - Jun 2017

Keywords

  • Conductivity
  • Edge states
  • Heterostructures
  • Interfaces
  • Photoresponse
  • Transition metal dichalcogenides

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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