Enhanced electro-optic effect in GaInAsP-InP three-step quantum wells

H. Mohseni; H. An; Z. A. Shellenbarger; M. H. Kwakernaak; J. H. Abeles

doi:10.1063/1.1682699

Enhanced electro-optic effect in GaInAsP-InP three-step quantum wells

H. Mohseni^*, H. An, Z. A. Shellenbarger, M. H. Kwakernaak, J. H. Abeles

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

The enhanced electro-optic coefficient of phase modulators employing InGaAsP/InP three-step quantum wells (3SQW) was reported. Structural and optical properties of the epitaxial layers were characterized with high-resolution x-ray diffraction and photoluminescence techniques. Enhanced δn/δV combined with an optical absorption coefficient below 1 cm ^-1 led to ∼36 times higher figure of merit, and nearly one order of magnitude lower power consumption in the modulator. These properties make 3SQW an ideal candidate for high-power, low-drive voltage MZ modulators required for high performance analog radio frequency link applications.

Original language	English (US)
Pages (from-to)	1823-1825
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	11
DOIs	https://doi.org/10.1063/1.1682699
State	Published - Mar 15 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1682699

Cite this

@article{e7fb965fcb5e452d81bd93ac5ccc4003,

title = "Enhanced electro-optic effect in GaInAsP-InP three-step quantum wells",

abstract = "The enhanced electro-optic coefficient of phase modulators employing InGaAsP/InP three-step quantum wells (3SQW) was reported. Structural and optical properties of the epitaxial layers were characterized with high-resolution x-ray diffraction and photoluminescence techniques. Enhanced δn/δV combined with an optical absorption coefficient below 1 cm -1 led to ∼36 times higher figure of merit, and nearly one order of magnitude lower power consumption in the modulator. These properties make 3SQW an ideal candidate for high-power, low-drive voltage MZ modulators required for high performance analog radio frequency link applications.",

author = "H. Mohseni and H. An and Shellenbarger, \{Z. A.\} and Kwakernaak, \{M. H.\} and Abeles, \{J. H.\}",

year = "2004",

month = mar,

day = "15",

doi = "10.1063/1.1682699",

language = "English (US)",

volume = "84",

pages = "1823--1825",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Enhanced electro-optic effect in GaInAsP-InP three-step quantum wells

AU - Mohseni, H.

AU - An, H.

AU - Shellenbarger, Z. A.

AU - Kwakernaak, M. H.

AU - Abeles, J. H.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - The enhanced electro-optic coefficient of phase modulators employing InGaAsP/InP three-step quantum wells (3SQW) was reported. Structural and optical properties of the epitaxial layers were characterized with high-resolution x-ray diffraction and photoluminescence techniques. Enhanced δn/δV combined with an optical absorption coefficient below 1 cm -1 led to ∼36 times higher figure of merit, and nearly one order of magnitude lower power consumption in the modulator. These properties make 3SQW an ideal candidate for high-power, low-drive voltage MZ modulators required for high performance analog radio frequency link applications.

AB - The enhanced electro-optic coefficient of phase modulators employing InGaAsP/InP three-step quantum wells (3SQW) was reported. Structural and optical properties of the epitaxial layers were characterized with high-resolution x-ray diffraction and photoluminescence techniques. Enhanced δn/δV combined with an optical absorption coefficient below 1 cm -1 led to ∼36 times higher figure of merit, and nearly one order of magnitude lower power consumption in the modulator. These properties make 3SQW an ideal candidate for high-power, low-drive voltage MZ modulators required for high performance analog radio frequency link applications.

UR - http://www.scopus.com/inward/record.url?scp=1842687902&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842687902&partnerID=8YFLogxK

U2 - 10.1063/1.1682699

DO - 10.1063/1.1682699

M3 - Article

AN - SCOPUS:1842687902

SN - 0003-6951

VL - 84

SP - 1823

EP - 1825

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Enhanced electro-optic effect in GaInAsP-InP three-step quantum wells

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this