Enhanced field-emission behavior of layered MoS2 sheets

Ranjit V. Kashid; Dattatray J. Late; Stanley S. Chou; Yi Kai Huang; Mrinmoy De; Dilip S. Joag; Mahendra A. More; Vinayak P. Dravid

doi:10.1002/smll.201300002

Enhanced field-emission behavior of layered MoS₂ sheets

Ranjit V. Kashid, Dattatray J. Late, Stanley S. Chou, Yi Kai Huang, Mrinmoy De, Dilip S. Joag, Mahendra A. More^*, Vinayak P. Dravid

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

185 Scopus citations

Abstract

Field emission studies are reported for the first time on layered MoS ₂ sheets at the base pressure of ∼1 × 10^-8 mbar. The turn-on field required to draw a field emission current density of 10 μA/cm² is found to be 3.5 V/μm for MoS₂ sheets. The turn-on values are found to be significantly lower than the reported MoS ₂ nanoflowers, graphene, and carbon nanotube-based field emitters due to the high field enhancement factor (∼1138) associated with nanometric sharp edges of MoS₂ sheet emitter surface. The emission current-time plots show good stability over a period of 3 h. Owing to the low turn-on field and planar (sheetlike) structure, the MoS₂ could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications. Field emission studies of few-layer MoS₂ sheets show that the turn-on field required to draw a current density of 10 μA/cm ² is 3.5 V/μm. The turn-on value is comparable with MoS ₂ nanoflower-, graphene-, and carbon nanotube-based field emitters. The low turn-on field value is due to the high field-enhancement factor (∼1138) associated with the nanometric sharp edges of the MoS₂ sheets. It is possible to orient the layered MoS₂ sheets for achieving a higher field enhancement factor, resulting in a high current density obtainable at the lower field.

Original language	English (US)
Pages (from-to)	2730-2734
Number of pages	5
Journal	Small
Volume	9
Issue number	16
DOIs	https://doi.org/10.1002/smll.201300002
State	Published - Aug 26 2013

Keywords

MoS
field emission
field enhancement factors
layered materials

ASJC Scopus subject areas

Biotechnology
Biomaterials
Chemistry(all)
Materials Science(all)

Access to Document

10.1002/smll.201300002

Cite this

@article{05302362baef40bfb16a4b3d8311a0cb,

title = "Enhanced field-emission behavior of layered MoS2 sheets",

abstract = "Field emission studies are reported for the first time on layered MoS 2 sheets at the base pressure of ∼1 × 10-8 mbar. The turn-on field required to draw a field emission current density of 10 μA/cm2 is found to be 3.5 V/μm for MoS2 sheets. The turn-on values are found to be significantly lower than the reported MoS 2 nanoflowers, graphene, and carbon nanotube-based field emitters due to the high field enhancement factor (∼1138) associated with nanometric sharp edges of MoS2 sheet emitter surface. The emission current-time plots show good stability over a period of 3 h. Owing to the low turn-on field and planar (sheetlike) structure, the MoS2 could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications. Field emission studies of few-layer MoS2 sheets show that the turn-on field required to draw a current density of 10 μA/cm 2 is 3.5 V/μm. The turn-on value is comparable with MoS 2 nanoflower-, graphene-, and carbon nanotube-based field emitters. The low turn-on field value is due to the high field-enhancement factor (∼1138) associated with the nanometric sharp edges of the MoS2 sheets. It is possible to orient the layered MoS2 sheets for achieving a higher field enhancement factor, resulting in a high current density obtainable at the lower field.",

keywords = "MoS, field emission, field enhancement factors, layered materials",

author = "Kashid, {Ranjit V.} and Late, {Dattatray J.} and Chou, {Stanley S.} and Huang, {Yi Kai} and Mrinmoy De and Joag, {Dilip S.} and More, {Mahendra A.} and Dravid, {Vinayak P.}",

year = "2013",

month = aug,

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doi = "10.1002/smll.201300002",

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AU - Kashid, Ranjit V.

AU - Late, Dattatray J.

AU - Chou, Stanley S.

AU - Huang, Yi Kai

AU - De, Mrinmoy

AU - Joag, Dilip S.

AU - More, Mahendra A.

AU - Dravid, Vinayak P.

PY - 2013/8/26

Y1 - 2013/8/26

N2 - Field emission studies are reported for the first time on layered MoS 2 sheets at the base pressure of ∼1 × 10-8 mbar. The turn-on field required to draw a field emission current density of 10 μA/cm2 is found to be 3.5 V/μm for MoS2 sheets. The turn-on values are found to be significantly lower than the reported MoS 2 nanoflowers, graphene, and carbon nanotube-based field emitters due to the high field enhancement factor (∼1138) associated with nanometric sharp edges of MoS2 sheet emitter surface. The emission current-time plots show good stability over a period of 3 h. Owing to the low turn-on field and planar (sheetlike) structure, the MoS2 could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications. Field emission studies of few-layer MoS2 sheets show that the turn-on field required to draw a current density of 10 μA/cm 2 is 3.5 V/μm. The turn-on value is comparable with MoS 2 nanoflower-, graphene-, and carbon nanotube-based field emitters. The low turn-on field value is due to the high field-enhancement factor (∼1138) associated with the nanometric sharp edges of the MoS2 sheets. It is possible to orient the layered MoS2 sheets for achieving a higher field enhancement factor, resulting in a high current density obtainable at the lower field.

AB - Field emission studies are reported for the first time on layered MoS 2 sheets at the base pressure of ∼1 × 10-8 mbar. The turn-on field required to draw a field emission current density of 10 μA/cm2 is found to be 3.5 V/μm for MoS2 sheets. The turn-on values are found to be significantly lower than the reported MoS 2 nanoflowers, graphene, and carbon nanotube-based field emitters due to the high field enhancement factor (∼1138) associated with nanometric sharp edges of MoS2 sheet emitter surface. The emission current-time plots show good stability over a period of 3 h. Owing to the low turn-on field and planar (sheetlike) structure, the MoS2 could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications. Field emission studies of few-layer MoS2 sheets show that the turn-on field required to draw a current density of 10 μA/cm 2 is 3.5 V/μm. The turn-on value is comparable with MoS 2 nanoflower-, graphene-, and carbon nanotube-based field emitters. The low turn-on field value is due to the high field-enhancement factor (∼1138) associated with the nanometric sharp edges of the MoS2 sheets. It is possible to orient the layered MoS2 sheets for achieving a higher field enhancement factor, resulting in a high current density obtainable at the lower field.

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