Enhanced magnetoresistance below the spin-flip transition of Cr(001) thin films

J. E. Mattson; S. D. Bader; M. B. Brodsky; J. B. Ketterson

doi:10.1016/0304-8853(92)91747-H

Enhanced magnetoresistance below the spin-flip transition of Cr(001) thin films

J. E. Mattson^*, S. D. Bader, M. B. Brodsky, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Magnetoresistance measurements are used to identify the spin-flip transition temperature T_sf in 500 and 3000 Å thick Cr(001) films grown epitaxially on LiF(001). T_sf is suppressed to a lower temperature in the 500 Å film compared to the bulk value of 123 K. The shift in T_sf with film thickness follows a similar stress dependence as that reported previously for bulk Cr crystals. The magnetoresistance is 50% at 4.2 K in a field of 5 T and still shows no sign of approaching saturation.

Original language	English (US)
Pages (from-to)	179-184
Number of pages	6
Journal	Journal of Magnetism and Magnetic Materials
Volume	109
Issue number	2-3
DOIs	https://doi.org/10.1016/0304-8853(92)91747-H
State	Published - Mar 1992

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{04f2d2caaf5a40a09cb0f9d156ce9e29,

title = "Enhanced magnetoresistance below the spin-flip transition of Cr(001) thin films",

abstract = "Magnetoresistance measurements are used to identify the spin-flip transition temperature Tsf in 500 and 3000 {\AA} thick Cr(001) films grown epitaxially on LiF(001). Tsf is suppressed to a lower temperature in the 500 {\AA} film compared to the bulk value of 123 K. The shift in Tsf with film thickness follows a similar stress dependence as that reported previously for bulk Cr crystals. The magnetoresistance is 50% at 4.2 K in a field of 5 T and still shows no sign of approaching saturation.",

author = "Mattson, {J. E.} and Bader, {S. D.} and Brodsky, {M. B.} and Ketterson, {J. B.}",

note = "Funding Information: We would like to thank J.A. Marcus for his helpful insight. This work was supported by the U.S. Department of Energy, BES-Materials Sciences, under contract W-31-109-ENG-38. One of us (J.E.M.) was supported by the NSF Materials Research Group contract No. DMR-86-03304 at the University of Texas, Austin.",

year = "1992",

month = mar,

doi = "10.1016/0304-8853(92)91747-H",

language = "English (US)",

volume = "109",

pages = "179--184",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "2-3",

}

TY - JOUR

T1 - Enhanced magnetoresistance below the spin-flip transition of Cr(001) thin films

AU - Mattson, J. E.

AU - Bader, S. D.

AU - Brodsky, M. B.

AU - Ketterson, J. B.

N1 - Funding Information: We would like to thank J.A. Marcus for his helpful insight. This work was supported by the U.S. Department of Energy, BES-Materials Sciences, under contract W-31-109-ENG-38. One of us (J.E.M.) was supported by the NSF Materials Research Group contract No. DMR-86-03304 at the University of Texas, Austin.

PY - 1992/3

Y1 - 1992/3

N2 - Magnetoresistance measurements are used to identify the spin-flip transition temperature Tsf in 500 and 3000 Å thick Cr(001) films grown epitaxially on LiF(001). Tsf is suppressed to a lower temperature in the 500 Å film compared to the bulk value of 123 K. The shift in Tsf with film thickness follows a similar stress dependence as that reported previously for bulk Cr crystals. The magnetoresistance is 50% at 4.2 K in a field of 5 T and still shows no sign of approaching saturation.

AB - Magnetoresistance measurements are used to identify the spin-flip transition temperature Tsf in 500 and 3000 Å thick Cr(001) films grown epitaxially on LiF(001). Tsf is suppressed to a lower temperature in the 500 Å film compared to the bulk value of 123 K. The shift in Tsf with film thickness follows a similar stress dependence as that reported previously for bulk Cr crystals. The magnetoresistance is 50% at 4.2 K in a field of 5 T and still shows no sign of approaching saturation.

UR - http://www.scopus.com/inward/record.url?scp=0026836211&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026836211&partnerID=8YFLogxK

U2 - 10.1016/0304-8853(92)91747-H

DO - 10.1016/0304-8853(92)91747-H

M3 - Article

AN - SCOPUS:0026836211

VL - 109

SP - 179

EP - 184

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 2-3

ER -

Enhanced magnetoresistance below the spin-flip transition of Cr(001) thin films

Abstract

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