Abstract
We report studies of photoluminescence from polycrystalline ZnO films deposited on sapphire as a function of the in situ oxygen pressure during growth and ex situ annealing. The ultraviolet photoluminescence was observed to increase by more than two orders of magnitude as a result of the annealing treatment. Enhanced cathodoluminescence was observed from the same films. The role of oxygen defects is discussed.
Original language | English (US) |
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Pages (from-to) | 232-236 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 460 |
Issue number | 1-2 |
DOIs | |
State | Published - Jul 22 2004 |
Keywords
- Oxygen partial pressure
- Photoluminescence
- ZnO films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry