Enhanced photoluminescence from polycrystalline ZnO films resulting from oxygen processing

Gang Wang*, G. Zhang, J. B. Ketterson, R. Gatt

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We report studies of photoluminescence from polycrystalline ZnO films deposited on sapphire as a function of the in situ oxygen pressure during growth and ex situ annealing. The ultraviolet photoluminescence was observed to increase by more than two orders of magnitude as a result of the annealing treatment. Enhanced cathodoluminescence was observed from the same films. The role of oxygen defects is discussed.

Original languageEnglish (US)
Pages (from-to)232-236
Number of pages5
JournalThin Solid Films
Volume460
Issue number1-2
DOIs
StatePublished - Jul 22 2004

Keywords

  • Oxygen partial pressure
  • Photoluminescence
  • ZnO films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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