Enhanced resistance to metal induced crystallization of amorphous Ge in contact with Bi

T. Missana*, C. N. Afonso, A. K. Petford-Long, R. C. Doole

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The metal-induced crystallization (MIC) of amorphous Ge ( α-Ge) has been studied in two different Bi/α-Ge bilayer film systems prepared by dc sputtering: films with nm-size columnar Bi grains and films with micron-size laminar Bi grains produced by pulsed laser irradiation. Both systems were annealed in situ in a transmission electron microscope in order to determine the temperature at which the semiconductor crystallizes as a function of the metal grain size and the mechanism by which crystallization occurs. The results show that increasing the gram size by two orders of magnitude leads to an increase in the Ge crystallization temperature above the eutectic temperature of the Ge-Bi system and, thus, to a system with an enhanced resistance to MIC.

Original languageEnglish (US)
Pages (from-to)2039-2041
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number14
DOIs
StatePublished - Sep 30 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Enhanced resistance to metal induced crystallization of amorphous Ge in contact with Bi'. Together they form a unique fingerprint.

  • Cite this