Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure

T. S. Pan; Y. Zhang; J. Huang; B. Zeng; D. H. Hong; S. L. Wang; H. Z. Zeng; M. Gao; W. Huang; Y. Lin

doi:10.1063/1.4748048

Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure

T. S. Pan, Y. Zhang^*, J. Huang, B. Zeng, D. H. Hong, S. L. Wang, H. Z. Zeng, M. Gao, W. Huang, Y. Lin

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

The growth-temperature dependency and interface structure effects on the thermal conductivity of the highly textured AlN thin films on (001) Si substrates were systematically studied by characterizing the crystal structures, surface morphologies, interface structures, chemical compositions, and thermal conductivity using x-ray diffraction analysis, atomic force microscopy, high resolution transmission electron microscopy, x-ray photoelectron spectroscopy, and 3-omega method, respectively. By optimizing the interface microstructure and the growth temperature, thermal conductivity of polycrystalline AlN thin films can be greatly enhanced from 9.9 to 26.7 W/mK, when the growth temperature increases from 330 to 560 °C. This achievement is considered to be associated with the diminishment of the amorphous and disordered layer at the AlN/Si interface.

Original language	English (US)
Article number	044905
Journal	Journal of Applied Physics
Volume	112
Issue number	4
DOIs	https://doi.org/10.1063/1.4748048
State	Published - Aug 15 2012

Funding

This work is supported by the National Basic Research Program of China (973 Program) under Grant No. 2011CB301705, the National Natural Science Foundation of China (Nos. 60976061, 51002023, and 11028409), and the Fundamental Research Funds for the Central Universities of China (Nos. ZYGX2009Z0001 and ZYGX2011J028).

ASJC Scopus subject areas

General Physics and Astronomy

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@article{b4d41269c22a4ee7ab54d881d2b9709d,

title = "Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure",

abstract = "The growth-temperature dependency and interface structure effects on the thermal conductivity of the highly textured AlN thin films on (001) Si substrates were systematically studied by characterizing the crystal structures, surface morphologies, interface structures, chemical compositions, and thermal conductivity using x-ray diffraction analysis, atomic force microscopy, high resolution transmission electron microscopy, x-ray photoelectron spectroscopy, and 3-omega method, respectively. By optimizing the interface microstructure and the growth temperature, thermal conductivity of polycrystalline AlN thin films can be greatly enhanced from 9.9 to 26.7 W/mK, when the growth temperature increases from 330 to 560 °C. This achievement is considered to be associated with the diminishment of the amorphous and disordered layer at the AlN/Si interface.",

author = "Pan, {T. S.} and Y. Zhang and J. Huang and B. Zeng and Hong, {D. H.} and Wang, {S. L.} and Zeng, {H. Z.} and M. Gao and W. Huang and Y. Lin",

note = "Funding Information: This work is supported by the National Basic Research Program of China (973 Program) under Grant No. 2011CB301705, the National Natural Science Foundation of China (Nos. 60976061, 51002023, and 11028409), and the Fundamental Research Funds for the Central Universities of China (Nos. ZYGX2009Z0001 and ZYGX2011J028). ",

year = "2012",

month = aug,

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doi = "10.1063/1.4748048",

language = "English (US)",

volume = "112",

journal = "Journal of Applied Physics",

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T1 - Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure

AU - Pan, T. S.

AU - Zhang, Y.

AU - Huang, J.

AU - Zeng, B.

AU - Hong, D. H.

AU - Wang, S. L.

AU - Zeng, H. Z.

AU - Gao, M.

AU - Huang, W.

AU - Lin, Y.

N1 - Funding Information: This work is supported by the National Basic Research Program of China (973 Program) under Grant No. 2011CB301705, the National Natural Science Foundation of China (Nos. 60976061, 51002023, and 11028409), and the Fundamental Research Funds for the Central Universities of China (Nos. ZYGX2009Z0001 and ZYGX2011J028).

PY - 2012/8/15

Y1 - 2012/8/15

N2 - The growth-temperature dependency and interface structure effects on the thermal conductivity of the highly textured AlN thin films on (001) Si substrates were systematically studied by characterizing the crystal structures, surface morphologies, interface structures, chemical compositions, and thermal conductivity using x-ray diffraction analysis, atomic force microscopy, high resolution transmission electron microscopy, x-ray photoelectron spectroscopy, and 3-omega method, respectively. By optimizing the interface microstructure and the growth temperature, thermal conductivity of polycrystalline AlN thin films can be greatly enhanced from 9.9 to 26.7 W/mK, when the growth temperature increases from 330 to 560 °C. This achievement is considered to be associated with the diminishment of the amorphous and disordered layer at the AlN/Si interface.

AB - The growth-temperature dependency and interface structure effects on the thermal conductivity of the highly textured AlN thin films on (001) Si substrates were systematically studied by characterizing the crystal structures, surface morphologies, interface structures, chemical compositions, and thermal conductivity using x-ray diffraction analysis, atomic force microscopy, high resolution transmission electron microscopy, x-ray photoelectron spectroscopy, and 3-omega method, respectively. By optimizing the interface microstructure and the growth temperature, thermal conductivity of polycrystalline AlN thin films can be greatly enhanced from 9.9 to 26.7 W/mK, when the growth temperature increases from 330 to 560 °C. This achievement is considered to be associated with the diminishment of the amorphous and disordered layer at the AlN/Si interface.

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Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure

Abstract

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