Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure

T. S. Pan, Y. Zhang*, J. Huang, B. Zeng, D. H. Hong, S. L. Wang, H. Z. Zeng, M. Gao, W. Huang, Y. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

The growth-temperature dependency and interface structure effects on the thermal conductivity of the highly textured AlN thin films on (001) Si substrates were systematically studied by characterizing the crystal structures, surface morphologies, interface structures, chemical compositions, and thermal conductivity using x-ray diffraction analysis, atomic force microscopy, high resolution transmission electron microscopy, x-ray photoelectron spectroscopy, and 3-omega method, respectively. By optimizing the interface microstructure and the growth temperature, thermal conductivity of polycrystalline AlN thin films can be greatly enhanced from 9.9 to 26.7 W/mK, when the growth temperature increases from 330 to 560 °C. This achievement is considered to be associated with the diminishment of the amorphous and disordered layer at the AlN/Si interface.

Original languageEnglish (US)
Article number044905
JournalJournal of Applied Physics
Volume112
Issue number4
DOIs
StatePublished - Aug 15 2012

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure'. Together they form a unique fingerprint.

Cite this