TY - JOUR
T1 - Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe
AU - Zhao, Li Dong
AU - Zhang, Xiao
AU - Wu, Haijun
AU - Tan, Gangjian
AU - Pei, Yanling
AU - Xiao, Yu
AU - Chang, Cheng
AU - Wu, Di
AU - Chi, Hang
AU - Zheng, Lei
AU - Gong, Shengkai
AU - Uher, Ctirad
AU - He, Jiaqing
AU - Kanatzidis, Mercouri G.
N1 - Funding Information:
This work was supported in part by the Department of Energy, Office of Science Basic Energy Sciences Grant DE-SC0014520 (synthesis and characterization of samples). This work was also supported by the "Zhuoyue" Program from Beihang University, the Recruitment Program for Young Professionals, and the National Natural Science Foundation of China under Grant 51571007. This work was also partly supported by the Science, Technology and Innovation Commission of Shenzhen Municipality under Grant No. ZDSYS20141118160434515 and Guangdong Science and Technology Fund under Grant No. 2015A030308001 and the leading talents of Guangdong province Program. Microstructure characterization was performed in Center of Electron Microscopy in Zhejiang University.
Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/3/2
Y1 - 2016/3/2
N2 - We report enhanced thermoelectric performance in SnTe, where significantly improved electrical transport properties and reduced thermal conductivity were achieved simultaneously. The former was obtained from a larger hole Seebeck coefficient through Fermi level tuning by optimizing the carrier concentration with Ga, In, Bi, and Sb dopants, resulting in a power factor of 21 μW cm-1 K-2 and ZT of 0.9 at 823 K in Sn0.97Bi0.03Te. To reduce the lattice thermal conductivity without deteriorating the hole carrier mobility in Sn0.97Bi0.03Te, SrTe was chosen as the second phase to create strained endotaxial nanostructures as phonon scattering centers. As a result, the lattice thermal conductivity decreases strongly from ∼2.0 Wm-1 K-1 for Sn0.97Bi0.03Te to ∼1.2 Wm-1 K-1 as the SrTe content is increased from 0 to 5.0% at room temperature and from ∼1.1 to ∼0.70 Wm-1 K-1 at 823 K. For the Sn0.97Bi0.03Te-3% SrTe sample, this leads to a ZT of 1.2 at 823 K and a high average ZT (for SnTe) of 0.7 in the temperature range of 300-823 K, suggesting that SnTe is a robust candidate for medium-temperature thermoelectric applications.
AB - We report enhanced thermoelectric performance in SnTe, where significantly improved electrical transport properties and reduced thermal conductivity were achieved simultaneously. The former was obtained from a larger hole Seebeck coefficient through Fermi level tuning by optimizing the carrier concentration with Ga, In, Bi, and Sb dopants, resulting in a power factor of 21 μW cm-1 K-2 and ZT of 0.9 at 823 K in Sn0.97Bi0.03Te. To reduce the lattice thermal conductivity without deteriorating the hole carrier mobility in Sn0.97Bi0.03Te, SrTe was chosen as the second phase to create strained endotaxial nanostructures as phonon scattering centers. As a result, the lattice thermal conductivity decreases strongly from ∼2.0 Wm-1 K-1 for Sn0.97Bi0.03Te to ∼1.2 Wm-1 K-1 as the SrTe content is increased from 0 to 5.0% at room temperature and from ∼1.1 to ∼0.70 Wm-1 K-1 at 823 K. For the Sn0.97Bi0.03Te-3% SrTe sample, this leads to a ZT of 1.2 at 823 K and a high average ZT (for SnTe) of 0.7 in the temperature range of 300-823 K, suggesting that SnTe is a robust candidate for medium-temperature thermoelectric applications.
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U2 - 10.1021/jacs.5b13276
DO - 10.1021/jacs.5b13276
M3 - Article
C2 - 26871965
AN - SCOPUS:84959378687
VL - 138
SP - 2366
EP - 2373
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 7
ER -