Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

Bongjun Kim; Kelly Liang; Michael L. Geier; Mark C. Hersam; Ananth Dodabalapur

doi:10.1063/1.4958851

Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

Bongjun Kim, Kelly Liang, Michael L. Geier, Mark C. Hersam, Ananth Dodabalapur

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors such as enhanced on-current are also observed.

Original language	English (US)
Article number	023515
Journal	Applied Physics Letters
Volume	109
Issue number	2
DOIs	https://doi.org/10.1063/1.4958851
State	Published - Jul 11 2016

Funding

The authors acknowledge financial support from the Office of Naval Research MURI Grant No. N00014-11-1-0690 and National Science Foundation Grant No. ECCS-1407932. A National Science Foundation Graduate Research Fellowship (M.L.G.) is also acknowledged.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors such as enhanced on-current are also observed.",

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Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

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