Abstract
We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors such as enhanced on-current are also observed.
Original language | English (US) |
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Article number | 023515 |
Journal | Applied Physics Letters |
Volume | 109 |
Issue number | 2 |
DOIs | |
State | Published - Jul 11 2016 |
Funding
The authors acknowledge financial support from the Office of Naval Research MURI Grant No. N00014-11-1-0690 and National Science Foundation Grant No. ECCS-1407932. A National Science Foundation Graduate Research Fellowship (M.L.G.) is also acknowledged.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)