Environmental engineering of transition metal dichalcogenide optoelectronics

Trevor LaMountain; Erik J. Lenferink; Yen Jung Chen; Teodor K. Stanev; Nathaniel P. Stern

doi:10.1007/s11467-018-0795-x

Environmental engineering of transition metal dichalcogenide optoelectronics

Trevor LaMountain, Erik J. Lenferink, Yen Jung Chen, Teodor K. Stanev, Nathaniel P. Stern^*

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Review article › peer-review

15 Scopus citations

Abstract

The explosion of interest in two-dimensional van der Waals materials has been in many ways driven by their layered geometry. This feature makes possible numerous avenues for assembling and manipulating the optical and electronic properties of these materials. In the specific case of monolayer transition metal dichalcogenide semiconductors, the direct band gap combined with the flexibility for manipulation of layers has made this class of materials promising for optoelectronics. Here, we review the properties of these layered materials and the various means of engineering these properties for optoelectronics. We summarize approaches for control that modify their structural and chemical environment, and we give particular detail on the integration of these materials into engineered optical fields to control their optical characteristics. This combination of controllability from their layered surface structure and photonic environment provide an expansive landscape for novel optoelectronic phenomena.

Original language	English (US)
Article number	138114
Journal	Frontiers of Physics
Volume	13
Issue number	4
DOIs	https://doi.org/10.1007/s11467-018-0795-x
State	Published - Aug 1 2018

Funding

Acknowledgements The authors acknowledge support by the Office of Naval Research under Grant No. N00014-16-1-3055, the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under award No. DESC0012130, and National Science Foundation MRSEC program under grant No. DMR-1720139 at the Materials Research Center of Northwestern University.

Keywords

excitons
heterostructures
optoelectronics
transition metal dichalcogenides
van der Waals materials

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1007/s11467-018-0795-x

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title = "Environmental engineering of transition metal dichalcogenide optoelectronics",

abstract = "The explosion of interest in two-dimensional van der Waals materials has been in many ways driven by their layered geometry. This feature makes possible numerous avenues for assembling and manipulating the optical and electronic properties of these materials. In the specific case of monolayer transition metal dichalcogenide semiconductors, the direct band gap combined with the flexibility for manipulation of layers has made this class of materials promising for optoelectronics. Here, we review the properties of these layered materials and the various means of engineering these properties for optoelectronics. We summarize approaches for control that modify their structural and chemical environment, and we give particular detail on the integration of these materials into engineered optical fields to control their optical characteristics. This combination of controllability from their layered surface structure and photonic environment provide an expansive landscape for novel optoelectronic phenomena.",

keywords = "excitons, heterostructures, optoelectronics, transition metal dichalcogenides, van der Waals materials",

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AU - Stern, Nathaniel P.

N1 - Funding Information: Acknowledgements The authors acknowledge support by the Office of Naval Research under Grant No. N00014-16-1-3055, the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under award No. DESC0012130, and National Science Foundation MRSEC program under grant No. DMR-1720139 at the Materials Research Center of Northwestern University. Publisher Copyright: © 2018, Higher Education Press and Springer-Verlag GmbH Germany, part of Springer Nature.

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N2 - The explosion of interest in two-dimensional van der Waals materials has been in many ways driven by their layered geometry. This feature makes possible numerous avenues for assembling and manipulating the optical and electronic properties of these materials. In the specific case of monolayer transition metal dichalcogenide semiconductors, the direct band gap combined with the flexibility for manipulation of layers has made this class of materials promising for optoelectronics. Here, we review the properties of these layered materials and the various means of engineering these properties for optoelectronics. We summarize approaches for control that modify their structural and chemical environment, and we give particular detail on the integration of these materials into engineered optical fields to control their optical characteristics. This combination of controllability from their layered surface structure and photonic environment provide an expansive landscape for novel optoelectronic phenomena.

AB - The explosion of interest in two-dimensional van der Waals materials has been in many ways driven by their layered geometry. This feature makes possible numerous avenues for assembling and manipulating the optical and electronic properties of these materials. In the specific case of monolayer transition metal dichalcogenide semiconductors, the direct band gap combined with the flexibility for manipulation of layers has made this class of materials promising for optoelectronics. Here, we review the properties of these layered materials and the various means of engineering these properties for optoelectronics. We summarize approaches for control that modify their structural and chemical environment, and we give particular detail on the integration of these materials into engineered optical fields to control their optical characteristics. This combination of controllability from their layered surface structure and photonic environment provide an expansive landscape for novel optoelectronic phenomena.

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Environmental engineering of transition metal dichalcogenide optoelectronics

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