TY - JOUR
T1 - Epitaxial Atomic Layer Deposition of Sn-Doped Indium Oxide
AU - Emery, Jonathan Daniel
AU - Schlepütz, Christian M.
AU - Guo, Peijun
AU - Chang, R P H
AU - Martinson, Alex B.F.
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2016/2/3
Y1 - 2016/2/3
N2 - Coherently strained, epitaxial Sn-doped In2O3 (ITO) thin films were fabricated at temperatures as low as 250 °C using atomic layer deposition (ALD) on (001)-, (011)-, and (111)-oriented single-crystal Y-stabilized ZrO2 (YSZ) substrates. Resultant films possess cube-on-cube epitaxial relationships with the underlying YSZ substrates and are smooth, highly conductive, and optically transparent. This epitaxial ALD approach is favorable compared to many conventional growth techniques as it is a large-scale synthesis method that does not necessitate the use of high temperatures or ultrahigh vacuum. These films may prove valuable as a conductive growth template in areas where high-quality crystalline thin film substrates are important, such as solar energy materials, light-emitting diodes, or wide bandgap semiconductors. Furthermore, we discuss the applicability of this ALD system as an excellent model system for the study of ALD surface chemistry, nucleation, and film growth.
AB - Coherently strained, epitaxial Sn-doped In2O3 (ITO) thin films were fabricated at temperatures as low as 250 °C using atomic layer deposition (ALD) on (001)-, (011)-, and (111)-oriented single-crystal Y-stabilized ZrO2 (YSZ) substrates. Resultant films possess cube-on-cube epitaxial relationships with the underlying YSZ substrates and are smooth, highly conductive, and optically transparent. This epitaxial ALD approach is favorable compared to many conventional growth techniques as it is a large-scale synthesis method that does not necessitate the use of high temperatures or ultrahigh vacuum. These films may prove valuable as a conductive growth template in areas where high-quality crystalline thin film substrates are important, such as solar energy materials, light-emitting diodes, or wide bandgap semiconductors. Furthermore, we discuss the applicability of this ALD system as an excellent model system for the study of ALD surface chemistry, nucleation, and film growth.
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U2 - 10.1021/acs.cgd.5b01086
DO - 10.1021/acs.cgd.5b01086
M3 - Article
AN - SCOPUS:84957560338
SN - 1528-7483
VL - 16
SP - 640
EP - 645
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 2
ER -