Abstract
Al-Cu-Fe-Cr quasicrystalline thin films were grown on atomically flat Al2O3 sapphire (0001) substrates by single-target magnetron sputtering followed by annealing. A decagonal phase with the tenfold axis A10 parallel to the substrate surface normal was observed. The epitaxial decagonal film had two different unique orientations: a twofold P axis A2P and a twofold D axis A2D parallel to [101̄0] of the substrate. These two configurations were explained using a coincidence reciprocal lattice planes model for the interface energy. We show that this classic approach for crystal-crystal epitaxy can be applied to quasicrystal-crystal systems.
Original language | English (US) |
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Pages (from-to) | 47-55 |
Number of pages | 9 |
Journal | Philosophical Magazine Letters |
Volume | 83 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2003 |
Funding
ACKNOWLEDGEMENTS This work was supported by the US Air Force Office of Scientific Research– Department of Defense award F49620-96-0214. The authors would like to thank Technology Assessment and Transfer, Inc. for providing the sputtering target, Dr Yimei Zhu for letting us use the JEOL-3010 at Brookhaven National Laboratory and Dr Wharton Sinclair for providing the C code to inte rface Digital Micrograph and Se mpe r.
ASJC Scopus subject areas
- Condensed Matter Physics