Epitaxial decagonal thin films on crystalline substrates

E. J. Widjaja; L. D. Marks

doi:10.1080/0950083021000045760

Epitaxial decagonal thin films on crystalline substrates

E. J. Widjaja^*, L. D. Marks

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Al-Cu-Fe-Cr quasicrystalline thin films were grown on atomically flat Al₂O₃ sapphire (0001) substrates by single-target magnetron sputtering followed by annealing. A decagonal phase with the tenfold axis A₁₀ parallel to the substrate surface normal was observed. The epitaxial decagonal film had two different unique orientations: a twofold P axis A_2P and a twofold D axis A_2D parallel to [101̄0] of the substrate. These two configurations were explained using a coincidence reciprocal lattice planes model for the interface energy. We show that this classic approach for crystal-crystal epitaxy can be applied to quasicrystal-crystal systems.

Original language	English (US)
Pages (from-to)	47-55
Number of pages	9
Journal	Philosophical Magazine Letters
Volume	83
Issue number	1
DOIs	https://doi.org/10.1080/0950083021000045760
State	Published - Jan 2003

ASJC Scopus subject areas

Condensed Matter Physics

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10.1080/0950083021000045760

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title = "Epitaxial decagonal thin films on crystalline substrates",

abstract = "Al-Cu-Fe-Cr quasicrystalline thin films were grown on atomically flat Al2O3 sapphire (0001) substrates by single-target magnetron sputtering followed by annealing. A decagonal phase with the tenfold axis A10 parallel to the substrate surface normal was observed. The epitaxial decagonal film had two different unique orientations: a twofold P axis A2P and a twofold D axis A2D parallel to [10{\=1}0] of the substrate. These two configurations were explained using a coincidence reciprocal lattice planes model for the interface energy. We show that this classic approach for crystal-crystal epitaxy can be applied to quasicrystal-crystal systems.",

author = "Widjaja, {E. J.} and Marks, {L. D.}",

note = "Funding Information: ACKNOWLEDGEMENTS This work was supported by the US Air Force Office of Scientific Research– Department of Defense award F49620-96-0214. The authors would like to thank Technology Assessment and Transfer, Inc. for providing the sputtering target, Dr Yimei Zhu for letting us use the JEOL-3010 at Brookhaven National Laboratory and Dr Wharton Sinclair for providing the C code to inte rface Digital Micrograph and Se mpe r.",

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AU - Marks, L. D.

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AB - Al-Cu-Fe-Cr quasicrystalline thin films were grown on atomically flat Al2O3 sapphire (0001) substrates by single-target magnetron sputtering followed by annealing. A decagonal phase with the tenfold axis A10 parallel to the substrate surface normal was observed. The epitaxial decagonal film had two different unique orientations: a twofold P axis A2P and a twofold D axis A2D parallel to [101̄0] of the substrate. These two configurations were explained using a coincidence reciprocal lattice planes model for the interface energy. We show that this classic approach for crystal-crystal epitaxy can be applied to quasicrystal-crystal systems.

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Epitaxial decagonal thin films on crystalline substrates

Abstract

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