Epitaxial growth and strain relaxation of BaTi O3 thin films on SrTi O3 buffered (001) Si by molecular beam epitaxy

F. Niu*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

Epitaxial BaTi O3 (BTO) thin films were deposited by molecular beam epitaxy on (001) silicon using an approximately 5 ML thick SrTi O3 (STO) as an intermediate buffer layer. In situ reflection high-energy electron diffraction (RHEED) was employed to quantitatively determine strain relaxation from the change in the in-plane lattice spacing. The crystalline quality, composition, and surface morphology of the BTO thin films were characterized by a combination of x-ray diffraction (XRD), atomic force microscopy, and x-ray photoelectron spectroscopy. RHEED analysis indicates that the initial growth of BTO was pseudomorphic. Strain relaxation occurred when the thickness reached a critical value of 10 MLs or 4 nm. The lattice spacing approached the bulk BTO value for films with 30 nm thickness. The BTO layer grows via a two dimensional growth mode. XRD measurement indicates a rocking curving width of the BTO (002) peak on Si as low as 0.9° has been achieved. Strain relaxation of the BTO films grown on different substrates including MgO, MgO/STO buffered Si, and STO buffered Si are compared.

Original languageEnglish (US)
Pages (from-to)1053-1057
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number3
DOIs
StatePublished - Jun 11 2007

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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