TY - JOUR
T1 - Epitaxial growth and strain relaxation of BaTi O3 thin films on SrTi O3 buffered (001) Si by molecular beam epitaxy
AU - Niu, F.
AU - Wessels, B. W.
N1 - Funding Information:
The authors gratefully acknowledge the assistance of A. L. Meier in XRD analysis. This work was supported by the United States Air Force under Contract No. AFRL-33615-02-C-5053, the National Science Foundation under Contract Nos. MRSEC DMR-0076077 and ECS 0123469, and by SVTA, Inc. through an MDA SBIR phase II W9113M-04-C-0093 subcontract.
PY - 2007
Y1 - 2007
N2 - Epitaxial BaTi O3 (BTO) thin films were deposited by molecular beam epitaxy on (001) silicon using an approximately 5 ML thick SrTi O3 (STO) as an intermediate buffer layer. In situ reflection high-energy electron diffraction (RHEED) was employed to quantitatively determine strain relaxation from the change in the in-plane lattice spacing. The crystalline quality, composition, and surface morphology of the BTO thin films were characterized by a combination of x-ray diffraction (XRD), atomic force microscopy, and x-ray photoelectron spectroscopy. RHEED analysis indicates that the initial growth of BTO was pseudomorphic. Strain relaxation occurred when the thickness reached a critical value of 10 MLs or 4 nm. The lattice spacing approached the bulk BTO value for films with 30 nm thickness. The BTO layer grows via a two dimensional growth mode. XRD measurement indicates a rocking curving width of the BTO (002) peak on Si as low as 0.9° has been achieved. Strain relaxation of the BTO films grown on different substrates including MgO, MgO/STO buffered Si, and STO buffered Si are compared.
AB - Epitaxial BaTi O3 (BTO) thin films were deposited by molecular beam epitaxy on (001) silicon using an approximately 5 ML thick SrTi O3 (STO) as an intermediate buffer layer. In situ reflection high-energy electron diffraction (RHEED) was employed to quantitatively determine strain relaxation from the change in the in-plane lattice spacing. The crystalline quality, composition, and surface morphology of the BTO thin films were characterized by a combination of x-ray diffraction (XRD), atomic force microscopy, and x-ray photoelectron spectroscopy. RHEED analysis indicates that the initial growth of BTO was pseudomorphic. Strain relaxation occurred when the thickness reached a critical value of 10 MLs or 4 nm. The lattice spacing approached the bulk BTO value for films with 30 nm thickness. The BTO layer grows via a two dimensional growth mode. XRD measurement indicates a rocking curving width of the BTO (002) peak on Si as low as 0.9° has been achieved. Strain relaxation of the BTO films grown on different substrates including MgO, MgO/STO buffered Si, and STO buffered Si are compared.
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U2 - 10.1116/1.2539503
DO - 10.1116/1.2539503
M3 - Article
AN - SCOPUS:34249894423
VL - 25
SP - 1053
EP - 1057
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 3
ER -