Epitaxial growth of aluminum nitride on sapphire and silicon

K. Dovidenko; S. Oktyabrsky; J. Narayan; M. Razeghi

Epitaxial growth of aluminum nitride on sapphire and silicon

K. Dovidenko^*, S. Oktyabrsky, J. Narayan, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (101̄2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH₃ + N₂ gas mixtures. Different degrees of film crystallinity were observed for films grown on α-Al₂O₃ and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al₂O₃ was demonstrated with a dislocation density of about 2·10¹⁰ cm^-2. The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Original language	English (US)
Pages (from-to)	1023-1028
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	358
State	Published - Jan 1 1995

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "Epitaxial growth of aluminum nitride on sapphire and silicon",

abstract = "The microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10{\=1}2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-Al2O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2·1010 cm-2. The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.",

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year = "1995",

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T1 - Epitaxial growth of aluminum nitride on sapphire and silicon

AU - Dovidenko, K.

AU - Oktyabrsky, S.

AU - Narayan, J.

AU - Razeghi, M.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (101̄2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-Al2O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2·1010 cm-2. The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

AB - The microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (101̄2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-Al2O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2·1010 cm-2. The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

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Epitaxial growth of aluminum nitride on sapphire and silicon

Abstract

ASJC Scopus subject areas

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