Epitaxial growth of manganese-doped indium phosphide

K. Huang; B. W. Wessels

doi:10.1007/BF01794600

Epitaxial growth of manganese-doped indium phosphide

K. Huang^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Original language	English (US)
Pages (from-to)	1310-1312
Number of pages	3
Journal	Journal of Materials Science Letters
Volume	6
Issue number	11
DOIs	https://doi.org/10.1007/BF01794600
State	Published - Nov 1987

ASJC Scopus subject areas

General Materials Science

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@article{83b082adeda1407694fdc87fae970710,

title = "Epitaxial growth of manganese-doped indium phosphide",

author = "K. Huang and Wessels, {B. W.}",

year = "1987",

month = nov,

doi = "10.1007/BF01794600",

language = "English (US)",

volume = "6",

pages = "1310--1312",

journal = "Journal of Materials Science Letters",

issn = "0261-8028",

publisher = "Chapman & Hall",

number = "11",

}

TY - JOUR

T1 - Epitaxial growth of manganese-doped indium phosphide

AU - Huang, K.

AU - Wessels, B. W.

PY - 1987/11

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U2 - 10.1007/BF01794600

DO - 10.1007/BF01794600

M3 - Article

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SP - 1310

EP - 1312

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 11

ER -

Epitaxial growth of manganese-doped indium phosphide

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