EPITAXIAL GROWTH OF SILICON CARBIDE BY CHEMICAL VAPOR DEPOSITION.

B. Wessels*, H. C. Gatos, A. F. Witt

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Alpha-silicon carbide was grown on the alpha substrates from the silane-propane-hydrogen system. Optimum results in terms of crystalline perfection and electrical characteristics were obtained by growing on the Si (0001) substrate surfaces at 1600 degree C employing a Si/C ratio greater than one. The epitaxial growth of SiC was found to be an activated process best described by adsorption-desorption kinetics.

Original languageEnglish (US)
Pages (from-to)25-32
Number of pages8
Journal[No source information available]
StatePublished - Jan 1 1974

ASJC Scopus subject areas

  • Engineering(all)

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