Alpha-silicon carbide was grown on the alpha substrates from the silane-propane-hydrogen system. Optimum results in terms of crystalline perfection and electrical characteristics were obtained by growing on the Si (0001) substrate surfaces at 1600 degree C employing a Si/C ratio greater than one. The epitaxial growth of SiC was found to be an activated process best described by adsorption-desorption kinetics.
|Original language||English (US)|
|Number of pages||8|
|Journal||[No source information available]|
|State||Published - Jan 1 1974|
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