Epitaxial growth of (Sr1-xCax)CuO2 thin film with the infinite-layer structure by metal-organic chemical vapor deposition

K. W. Chang; B. W. Wessels; D. Studebaker; T. J. Marks

doi:10.1063/1.117632

Epitaxial growth of (Sr_1-xCa_x)CuO₂ thin film with the infinite-layer structure by metal-organic chemical vapor deposition

K. W. Chang^*, B. W. Wessels, D. Studebaker, T. J. Marks

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Phase-pure epitaxial (8_1-xCa_x)CuO₂ thin films having the infinite-layer crystal structure were grown on SrTiO₃ (100) substrates by low pressure metal-organic chemical vapor deposition using fluorinated metal-organic precursors. The substrate temperature and reactant gas (O₂, H₂O) partial pressure are crucial for stabilizing the tetragonal infinite-layer structure. Films with compositions over the range x=0-0.3 can be stabilized. In-plane epitaxy was confirmed by x-ray diffraction Φ scan. The films were semiconducting but exhibit resistivity anomalies. The orthorhombic phases of Sr₂CuO₃ and SrCuO₂ were stabilized at 700 $C and 750 °C, respectively.

Original language	English (US)
Pages (from-to)	1951-1953
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	13
DOIs	https://doi.org/10.1063/1.117632
State	Published - Sep 23 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Epitaxial growth of (Sr1-xCax)CuO2 thin film with the infinite-layer structure by metal-organic chemical vapor deposition",

abstract = "Phase-pure epitaxial (81-xCax)CuO2 thin films having the infinite-layer crystal structure were grown on SrTiO3 (100) substrates by low pressure metal-organic chemical vapor deposition using fluorinated metal-organic precursors. The substrate temperature and reactant gas (O2, H2O) partial pressure are crucial for stabilizing the tetragonal infinite-layer structure. Films with compositions over the range x=0-0.3 can be stabilized. In-plane epitaxy was confirmed by x-ray diffraction Φ scan. The films were semiconducting but exhibit resistivity anomalies. The orthorhombic phases of Sr2CuO3 and SrCuO2 were stabilized at 700 $C and 750 °C, respectively.",

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T1 - Epitaxial growth of (Sr1-xCax)CuO2 thin film with the infinite-layer structure by metal-organic chemical vapor deposition

AU - Chang, K. W.

AU - Wessels, B. W.

AU - Studebaker, D.

AU - Marks, T. J.

PY - 1996/9/23

Y1 - 1996/9/23

N2 - Phase-pure epitaxial (81-xCax)CuO2 thin films having the infinite-layer crystal structure were grown on SrTiO3 (100) substrates by low pressure metal-organic chemical vapor deposition using fluorinated metal-organic precursors. The substrate temperature and reactant gas (O2, H2O) partial pressure are crucial for stabilizing the tetragonal infinite-layer structure. Films with compositions over the range x=0-0.3 can be stabilized. In-plane epitaxy was confirmed by x-ray diffraction Φ scan. The films were semiconducting but exhibit resistivity anomalies. The orthorhombic phases of Sr2CuO3 and SrCuO2 were stabilized at 700 $C and 750 °C, respectively.

AB - Phase-pure epitaxial (81-xCax)CuO2 thin films having the infinite-layer crystal structure were grown on SrTiO3 (100) substrates by low pressure metal-organic chemical vapor deposition using fluorinated metal-organic precursors. The substrate temperature and reactant gas (O2, H2O) partial pressure are crucial for stabilizing the tetragonal infinite-layer structure. Films with compositions over the range x=0-0.3 can be stabilized. In-plane epitaxy was confirmed by x-ray diffraction Φ scan. The films were semiconducting but exhibit resistivity anomalies. The orthorhombic phases of Sr2CuO3 and SrCuO2 were stabilized at 700 $C and 750 °C, respectively.

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Epitaxial growth of (Sr_1-xCa_x)CuO₂ thin film with the infinite-layer structure by metal-organic chemical vapor deposition

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