Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition

S. R. Gilbert; B. W. Wessels; D. B. Studebaker; T. J. Marks

doi:10.1063/1.113736

Epitaxial growth of SrTiO₃ thin films by metalorganic chemical vapor deposition

S. R. Gilbert^*, B. W. Wessels, D. B. Studebaker, T. J. Marks

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Epitaxial SrTiO₃ thin films were prepared using low pressure metalorganic chemical vapor deposition. The volatile metalorganic precursors employed were Sr(hexafluoroacetyl acetonate)₂tetraglyme and titanium tetraisopropoxide. Single-phase, epitaxial films were deposited on (100)LaAlO₃ at a temperature of 810°C. In-plane epitaxy was verified using x-ray phi scan analysis. The SrTiO₃ films exhibit a significant tetragonal distortion with c/a=1.010(±1.6×10 ^-4) at room temperature. No evidence of fluorine contamination is noted by x-ray diffraction or by Auger electron spectroscopy measurements.

Original language	English (US)
Pages (from-to)	2487
Number of pages	1
Journal	Applied Physics Letters
Volume	66
DOIs	https://doi.org/10.1063/1.113736
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.113736

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title = "Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition",

abstract = "Epitaxial SrTiO3 thin films were prepared using low pressure metalorganic chemical vapor deposition. The volatile metalorganic precursors employed were Sr(hexafluoroacetyl acetonate)2tetraglyme and titanium tetraisopropoxide. Single-phase, epitaxial films were deposited on (100)LaAlO3 at a temperature of 810°C. In-plane epitaxy was verified using x-ray phi scan analysis. The SrTiO3 films exhibit a significant tetragonal distortion with c/a=1.010(±1.6×10 -4) at room temperature. No evidence of fluorine contamination is noted by x-ray diffraction or by Auger electron spectroscopy measurements.",

author = "Gilbert, {S. R.} and Wessels, {B. W.} and Studebaker, {D. B.} and Marks, {T. J.}",

year = "1995",

doi = "10.1063/1.113736",

language = "English (US)",

volume = "66",

pages = "2487",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition

AU - Gilbert, S. R.

AU - Wessels, B. W.

AU - Studebaker, D. B.

AU - Marks, T. J.

PY - 1995

Y1 - 1995

N2 - Epitaxial SrTiO3 thin films were prepared using low pressure metalorganic chemical vapor deposition. The volatile metalorganic precursors employed were Sr(hexafluoroacetyl acetonate)2tetraglyme and titanium tetraisopropoxide. Single-phase, epitaxial films were deposited on (100)LaAlO3 at a temperature of 810°C. In-plane epitaxy was verified using x-ray phi scan analysis. The SrTiO3 films exhibit a significant tetragonal distortion with c/a=1.010(±1.6×10 -4) at room temperature. No evidence of fluorine contamination is noted by x-ray diffraction or by Auger electron spectroscopy measurements.

AB - Epitaxial SrTiO3 thin films were prepared using low pressure metalorganic chemical vapor deposition. The volatile metalorganic precursors employed were Sr(hexafluoroacetyl acetonate)2tetraglyme and titanium tetraisopropoxide. Single-phase, epitaxial films were deposited on (100)LaAlO3 at a temperature of 810°C. In-plane epitaxy was verified using x-ray phi scan analysis. The SrTiO3 films exhibit a significant tetragonal distortion with c/a=1.010(±1.6×10 -4) at room temperature. No evidence of fluorine contamination is noted by x-ray diffraction or by Auger electron spectroscopy measurements.

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DO - 10.1063/1.113736

M3 - Article

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VL - 66

SP - 2487

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Epitaxial growth of SrTiO₃ thin films by metalorganic chemical vapor deposition

Abstract

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