Epitaxial growth of ZrN on Si(100)

S. A. Barnett*, L. Hultman, J. E. Sundgren, F. Ronin, S. Rohde

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

Epitaxial ZrNx (x=1.0±0.05) films have been grown on Si(100) substrates using reactive magnetron sputtering. The films were deposited from a Zr sputtering target in a pure N2 discharge with a growth rate of 700 nm/h and substrate temperatures Ts=750 and 900 °C. X-ray diffractometer results showed complete (100) preferred orientation for both temperatures. Transmission electron microscopy (TEM) observations for samples grown at Ts=750 °C indicated that the (100) grains were almost randomly oriented about the surface normal, but that a small fraction of epitaxial grains were present. Electron channeling and TEM showed that ZrN films were epitaxial for Ts=900 °C. The epitaxial relationships were found to be ZrN(100)//Si(100) and ZrN[011]//Si[011]. The resistivity of the films was 25-35 μω cm.

Original languageEnglish (US)
Pages (from-to)400-402
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number5
DOIs
StatePublished - 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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