Abstract
Epitaxial ZrNx (x=1.0±0.05) films have been grown on Si(100) substrates using reactive magnetron sputtering. The films were deposited from a Zr sputtering target in a pure N2 discharge with a growth rate of 700 nm/h and substrate temperatures Ts=750 and 900 °C. X-ray diffractometer results showed complete (100) preferred orientation for both temperatures. Transmission electron microscopy (TEM) observations for samples grown at Ts=750 °C indicated that the (100) grains were almost randomly oriented about the surface normal, but that a small fraction of epitaxial grains were present. Electron channeling and TEM showed that ZrN films were epitaxial for Ts=900 °C. The epitaxial relationships were found to be ZrN(100)//Si(100) and ZrN[011]//Si[011]. The resistivity of the films was 25-35 μω cm.
Original language | English (US) |
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Pages (from-to) | 400-402 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 53 |
Issue number | 5 |
DOIs | |
State | Published - 1988 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)