Epitaxial growth of ZrN on Si(100)

S. A. Barnett; L. Hultman; J. E. Sundgren; F. Ronin; S. Rohde

doi:10.1063/1.99891

Epitaxial growth of ZrN on Si(100)

S. A. Barnett^*, L. Hultman, J. E. Sundgren, F. Ronin, S. Rohde

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Epitaxial ZrN_x (x=1.0±0.05) films have been grown on Si(100) substrates using reactive magnetron sputtering. The films were deposited from a Zr sputtering target in a pure N₂ discharge with a growth rate of 700 nm/h and substrate temperatures T_s=750 and 900 °C. X-ray diffractometer results showed complete (100) preferred orientation for both temperatures. Transmission electron microscopy (TEM) observations for samples grown at T_s=750 °C indicated that the (100) grains were almost randomly oriented about the surface normal, but that a small fraction of epitaxial grains were present. Electron channeling and TEM showed that ZrN films were epitaxial for T_s=900 °C. The epitaxial relationships were found to be ZrN(100)//Si(100) and ZrN[011]//Si[011]. The resistivity of the films was 25-35 μω cm.

Original language	English (US)
Pages (from-to)	400-402
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	5
DOIs	https://doi.org/10.1063/1.99891
State	Published - 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Epitaxial growth of ZrN on Si(100)",

abstract = "Epitaxial ZrNx (x=1.0±0.05) films have been grown on Si(100) substrates using reactive magnetron sputtering. The films were deposited from a Zr sputtering target in a pure N2 discharge with a growth rate of 700 nm/h and substrate temperatures Ts=750 and 900 °C. X-ray diffractometer results showed complete (100) preferred orientation for both temperatures. Transmission electron microscopy (TEM) observations for samples grown at Ts=750 °C indicated that the (100) grains were almost randomly oriented about the surface normal, but that a small fraction of epitaxial grains were present. Electron channeling and TEM showed that ZrN films were epitaxial for Ts=900 °C. The epitaxial relationships were found to be ZrN(100)//Si(100) and ZrN[011]//Si[011]. The resistivity of the films was 25-35 μω cm.",

author = "Barnett, {S. A.} and L. Hultman and Sundgren, {J. E.} and F. Ronin and S. Rohde",

year = "1988",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Epitaxial growth of ZrN on Si(100)

AU - Barnett, S. A.

AU - Hultman, L.

AU - Sundgren, J. E.

AU - Ronin, F.

AU - Rohde, S.

PY - 1988

Y1 - 1988

N2 - Epitaxial ZrNx (x=1.0±0.05) films have been grown on Si(100) substrates using reactive magnetron sputtering. The films were deposited from a Zr sputtering target in a pure N2 discharge with a growth rate of 700 nm/h and substrate temperatures Ts=750 and 900 °C. X-ray diffractometer results showed complete (100) preferred orientation for both temperatures. Transmission electron microscopy (TEM) observations for samples grown at Ts=750 °C indicated that the (100) grains were almost randomly oriented about the surface normal, but that a small fraction of epitaxial grains were present. Electron channeling and TEM showed that ZrN films were epitaxial for Ts=900 °C. The epitaxial relationships were found to be ZrN(100)//Si(100) and ZrN[011]//Si[011]. The resistivity of the films was 25-35 μω cm.

AB - Epitaxial ZrNx (x=1.0±0.05) films have been grown on Si(100) substrates using reactive magnetron sputtering. The films were deposited from a Zr sputtering target in a pure N2 discharge with a growth rate of 700 nm/h and substrate temperatures Ts=750 and 900 °C. X-ray diffractometer results showed complete (100) preferred orientation for both temperatures. Transmission electron microscopy (TEM) observations for samples grown at Ts=750 °C indicated that the (100) grains were almost randomly oriented about the surface normal, but that a small fraction of epitaxial grains were present. Electron channeling and TEM showed that ZrN films were epitaxial for Ts=900 °C. The epitaxial relationships were found to be ZrN(100)//Si(100) and ZrN[011]//Si[011]. The resistivity of the films was 25-35 μω cm.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Epitaxial growth of ZrN on Si(100)

Abstract

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