Epitaxial heterostructure nanowires

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Semiconductor heterostructures are the basis for modern solid-state electronic and optoelectronic devices, including field-effect transistors, lasers, and light-emitting diodes. Epitaxial nanowire heterostructures enable crystal growers to transcend limitations of conventional thin-film heterostructures to create new opportunities for device engineering. This chapter provides a brief introduction to opportunities and challenges provided by nanowire heterostructures. Key concepts are illustrated with selected examples, primarily of III-V materials. We first introduce growth methods and classes of heterostructures and then identify targets for the control of structure and composition. We then describe the principles that govern structure-property relationships, provide recent examples of nanowire electrical and optical devices, and highlight the fundamental properties that currently limit performance. The control of interface structure and complete modeling of device properties are noted as important outstanding challenges.

Original languageEnglish (US)
Title of host publicationNovel Compound Semiconductor Nanowires
Subtitle of host publicationMaterials, Devices, and Applications
PublisherPan Stanford Publishing Pte. Ltd.
Pages3-30
Number of pages28
ISBN (Electronic)9789814745772
ISBN (Print)9789814745765
DOIs
StatePublished - Jan 1 2017

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Engineering(all)
  • Materials Science(all)

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