Epitaxial La0.67Sr0.33MnO3 magnetic tunnel junctions

X. W. Li*, Yu Lu, G. Q. Gong, Gang Xiao, A. Gupta, P. Lecoeur, J. Z. Sun, Y. Y. Wang, V. P. Dravid

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

46 Scopus citations


We report the observation of a large magnetoresistance (83%) at low magnetic fields of tens of Oe at 4.2 K in the epitaxial trilayer junction structure, La0.67Sr0.33MnO3/SrTiO3/La 0.67Sr0.33MnO3. The spin-polarization parameter of the manganite has been determined from the magnetoresistance value. The switching fields of the two magnetic layers were designed by using the magnetic shape anisotropy. By limiting the sweeping field in a low field range (∼100 Oe), we have achieved bistable resistive states at zero field, which is of potential interest for magnetoelectronic applications.

Original languageEnglish (US)
Pages (from-to)5509-5511
Number of pages3
JournalJournal of Applied Physics
Issue number8 PART 2B
StatePublished - Apr 15 1997

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Epitaxial La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub> magnetic tunnel junctions'. Together they form a unique fingerprint.

Cite this