Epitaxial cubic MgO thin films have been deposited on single crystal Si(001) substrates by metalorganic molecular beam epitaxy. The Mg source was the solid precursor magnesium acetylacetonate and a rf excited oxygen plasma was the oxidant. The growth process involved initial formation of an epitaxial β-SiC interlayer followed by direct deposition of a MgO overlayer. The films were characterized by in situ reflection high energy electron diffraction, x-ray diffraction, conventional and high resolution transmission electron microscopy, atomic force microscopy, Auger electron spectroscopy, and Fourier transform infrared spectroscopy. The β-SiC interlayer had an epitaxial relationship such that SiC(001)∥Si(001) and SiC ∥Si . The SiC interlayer showed a columnar grain structure with planar defects including twin bands and stacking faults. The MgO overlayer showed an epitaxial relationship given by MgO(001)∥Si(001) and MgO∥Si. No evidence of twins in the MgO layers was observed.
|Original language||English (US)|
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Dec 1 2000|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering