Abstract
Epitaxial cubic MgO thin films have been deposited on single crystal Si(001) substrates by metalorganic molecular beam epitaxy. The Mg source was the solid precursor magnesium acetylacetonate and a rf excited oxygen plasma was the oxidant. The growth process involved initial formation of an epitaxial β-SiC interlayer followed by direct deposition of a MgO overlayer. The films were characterized by in situ reflection high energy electron diffraction, x-ray diffraction, conventional and high resolution transmission electron microscopy, atomic force microscopy, Auger electron spectroscopy, and Fourier transform infrared spectroscopy. The β-SiC interlayer had an epitaxial relationship such that SiC(001)∥Si(001) and SiC [110]∥Si [110]. The SiC interlayer showed a columnar grain structure with planar defects including twin bands and stacking faults. The MgO overlayer showed an epitaxial relationship given by MgO(001)∥Si(001) and MgO[110]∥Si[110]. No evidence of twins in the MgO layers was observed.
Original language | English (US) |
---|---|
Pages (from-to) | 2146-2152 |
Number of pages | 7 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 18 |
Issue number | 4 |
State | Published - Dec 1 2000 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering