Erratum: Influence of N on the electronic properties of GaAsN alloy films and heterostructures (J. Appl. Phys. (2007) 102(10) (103710) (10.1063/1.2798629))

M. Reason; Y. Jin; H. A. Mckay; N. Mangan; D. Mao; R. S. Goldman; X. Bai; C. Kurdak

doi:10.1063/1.2832754

Erratum: Influence of N on the electronic properties of GaAsN alloy films and heterostructures (J. Appl. Phys. (2007) 102(10) (103710) (10.1063/1.2798629))

M. Reason, Y. Jin, H. A. Mckay, N. Mangan, D. Mao, R. S. Goldman, X. Bai, C. Kurdak

Engineering Sciences and Applied Mathematics

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

Several references in the paper were inadvertently misprinted. In the description of the photoconductivity effect in the last sentence of Sec. II on page 2, Ref. 34 was incorrectly included. The models for Si-N defect complexes discussed on page 4, line 19, were attributed to papers previously references in the text as Refs. 40 and 41, rather than to the appropriate references listed below as Refs. 52 and 53. In addition, on page 4, line 33, Ref. 33 should be labeled as Ref. 46. Finally, in the caption of Fig. 2, Ref. 34 should be labeled as Ref. 37. These changes do not affect any of the results or conclusions in our paper. We extend our apologies to the readers, particularly to the authors of Refs. 52 and 53.

Original language	English (US)
Pages (from-to)	103710
Number of pages	1
Journal	Journal of Applied Physics
Volume	102
Issue number	1
DOIs	https://doi.org/10.1063/1.2832754
State	Published - Jan 1 2008

Funding

This study is supported by the Major Research Program (A), Institute of Policy and Management, Chinese Academy of Sciences (Y201131Z03), the Strategic Priority Research Program, Chinese Academy of Sciences (XDA05140108), Project Supported by the National Natural Science Foundation of China (71101137) and Project Supported by China's Clean Development Mechanism (CDM) Fund of National Development and Reform Commission (2013091).

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.2832754

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title = "Erratum: Influence of N on the electronic properties of GaAsN alloy films and heterostructures (J. Appl. Phys. (2007) 102(10) (103710) (10.1063/1.2798629))",

abstract = "Several references in the paper were inadvertently misprinted. In the description of the photoconductivity effect in the last sentence of Sec. II on page 2, Ref. 34 was incorrectly included. The models for Si-N defect complexes discussed on page 4, line 19, were attributed to papers previously references in the text as Refs. 40 and 41, rather than to the appropriate references listed below as Refs. 52 and 53. In addition, on page 4, line 33, Ref. 33 should be labeled as Ref. 46. Finally, in the caption of Fig. 2, Ref. 34 should be labeled as Ref. 37. These changes do not affect any of the results or conclusions in our paper. We extend our apologies to the readers, particularly to the authors of Refs. 52 and 53.",

author = "M. Reason and Y. Jin and Mckay, {H. A.} and N. Mangan and D. Mao and Goldman, {R. S.} and X. Bai and C. Kurdak",

note = "Funding Information: This study is supported by the Major Research Program (A), Institute of Policy and Management, Chinese Academy of Sciences (Y201131Z03), the Strategic Priority Research Program, Chinese Academy of Sciences (XDA05140108), Project Supported by the National Natural Science Foundation of China (71101137) and Project Supported by China's Clean Development Mechanism (CDM) Fund of National Development and Reform Commission (2013091).",

year = "2008",

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doi = "10.1063/1.2832754",

language = "English (US)",

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T2 - Influence of N on the electronic properties of GaAsN alloy films and heterostructures (J. Appl. Phys. (2007) 102(10) (103710) (10.1063/1.2798629))

AU - Reason, M.

AU - Jin, Y.

AU - Mckay, H. A.

AU - Mangan, N.

AU - Mao, D.

AU - Goldman, R. S.

AU - Bai, X.

AU - Kurdak, C.

N1 - Funding Information: This study is supported by the Major Research Program (A), Institute of Policy and Management, Chinese Academy of Sciences (Y201131Z03), the Strategic Priority Research Program, Chinese Academy of Sciences (XDA05140108), Project Supported by the National Natural Science Foundation of China (71101137) and Project Supported by China's Clean Development Mechanism (CDM) Fund of National Development and Reform Commission (2013091).

PY - 2008/1/1

Y1 - 2008/1/1

N2 - Several references in the paper were inadvertently misprinted. In the description of the photoconductivity effect in the last sentence of Sec. II on page 2, Ref. 34 was incorrectly included. The models for Si-N defect complexes discussed on page 4, line 19, were attributed to papers previously references in the text as Refs. 40 and 41, rather than to the appropriate references listed below as Refs. 52 and 53. In addition, on page 4, line 33, Ref. 33 should be labeled as Ref. 46. Finally, in the caption of Fig. 2, Ref. 34 should be labeled as Ref. 37. These changes do not affect any of the results or conclusions in our paper. We extend our apologies to the readers, particularly to the authors of Refs. 52 and 53.

AB - Several references in the paper were inadvertently misprinted. In the description of the photoconductivity effect in the last sentence of Sec. II on page 2, Ref. 34 was incorrectly included. The models for Si-N defect complexes discussed on page 4, line 19, were attributed to papers previously references in the text as Refs. 40 and 41, rather than to the appropriate references listed below as Refs. 52 and 53. In addition, on page 4, line 33, Ref. 33 should be labeled as Ref. 46. Finally, in the caption of Fig. 2, Ref. 34 should be labeled as Ref. 37. These changes do not affect any of the results or conclusions in our paper. We extend our apologies to the readers, particularly to the authors of Refs. 52 and 53.

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Erratum: Influence of N on the electronic properties of GaAsN alloy films and heterostructures (J. Appl. Phys. (2007) 102(10) (103710) (10.1063/1.2798629))

Abstract

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