Erratum: Influence of N on the electronic properties of GaAsN alloy films and heterostructures (J. Appl. Phys. (2007) 102(10) (103710) (10.1063/1.2798629))

M. Reason, Y. Jin, H. A. Mckay, N. Mangan, D. Mao, R. S. Goldman, X. Bai, C. Kurdak

Research output: Contribution to journalComment/debate

Abstract

Several references in the paper were inadvertently misprinted. In the description of the photoconductivity effect in the last sentence of Sec. II on page 2, Ref. 34 was incorrectly included. The models for Si-N defect complexes discussed on page 4, line 19, were attributed to papers previously references in the text as Refs. 40 and 41, rather than to the appropriate references listed below as Refs. 52 and 53. In addition, on page 4, line 33, Ref. 33 should be labeled as Ref. 46. Finally, in the caption of Fig. 2, Ref. 34 should be labeled as Ref. 37. These changes do not affect any of the results or conclusions in our paper. We extend our apologies to the readers, particularly to the authors of Refs. 52 and 53.

Original languageEnglish (US)
Number of pages1
JournalJournal of Applied Physics
Volume102
Issue number1
DOIs
StatePublished - Jan 1 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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