Erratum: Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics (Applied Physics Letters (2006) 89 (073510))

Sanghyun Ju, Kangho Lee, David B. Janes*, Ramesh C. Dwivedi, Habibah Baffour-Awuah, R. Wilkins, Myung Han Yoon, Antonio Facchetti, Tobin Jay Marks

*Corresponding author for this work

Research output: Contribution to journalComment/debatepeer-review

1 Scopus citations
Original languageEnglish (US)
Article number139902
JournalApplied Physics Letters
Volume89
Issue number13
DOIs
StatePublished - Oct 6 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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