Etching of ZnO towards the Development of ZnO Homostructure LEDs

Kathryn Minder; Ferechteh Hosseini Teherani; Dave Rogers; Can Bayram; Ryan McClintock; Patrick Kung; Manijeh Razeghi

doi:10.1117/12.712784

Etching of ZnO towards the Development of ZnO Homostructure LEDs

Kathryn Minder^*, Ferechteh Hosseini Teherani, Dave Rogers, Can Bayram, Ryan McClintock, Patrick Kung, Manijeh Razeghi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

Although ZnO has recently gained much interest as an alternative to the III-Nitride material system, the development of ZnO based optoelectonic devices is still in its infancy. Significant material breakthroughs in p-type doping of ZnO thin films and improvements in crystal growth techniques have recently been achieved, making the development of optoelectonic devices possible. ZnO is known to be an efficient UV-emitting material (∼380 nm) at room temperature, optical UV lasing of ZnO has been achieved, and both homojunction and hybrid heterojunction LEDs have been demonstrated. In this paper, processing techniques are explored towards the achievement of a homo-junction ZnO LED. First, a survey of current ZnO processing methods is presented, followed by the results of our processing research. Specifically, we have examined etching through an n-ZnO layer to expose and make contact to a p-ZnO layer.

Original language	English (US)
Title of host publication	Zinc Oxide Materials and Devices II
DOIs	https://doi.org/10.1117/12.712784
State	Published - 2007
Event	Zinc Oxide Materials and Devices II - San Jose, CA, United States Duration: Jan 21 2007 → Jan 24 2007

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6474
ISSN (Print)	0277-786X

Other

Other	Zinc Oxide Materials and Devices II
Country/Territory	United States
City	San Jose, CA
Period	1/21/07 → 1/24/07

Keywords

Etching
Light-emitting diode
Processing
Ultraviolet
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.712784

Cite this

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title = "Etching of ZnO towards the Development of ZnO Homostructure LEDs",

abstract = "Although ZnO has recently gained much interest as an alternative to the III-Nitride material system, the development of ZnO based optoelectonic devices is still in its infancy. Significant material breakthroughs in p-type doping of ZnO thin films and improvements in crystal growth techniques have recently been achieved, making the development of optoelectonic devices possible. ZnO is known to be an efficient UV-emitting material (∼380 nm) at room temperature, optical UV lasing of ZnO has been achieved, and both homojunction and hybrid heterojunction LEDs have been demonstrated. In this paper, processing techniques are explored towards the achievement of a homo-junction ZnO LED. First, a survey of current ZnO processing methods is presented, followed by the results of our processing research. Specifically, we have examined etching through an n-ZnO layer to expose and make contact to a p-ZnO layer.",

keywords = "Etching, Light-emitting diode, Processing, Ultraviolet, ZnO",

author = "Kathryn Minder and Teherani, {Ferechteh Hosseini} and Dave Rogers and Can Bayram and Ryan McClintock and Patrick Kung and Manijeh Razeghi",

year = "2007",

doi = "10.1117/12.712784",

language = "English (US)",

isbn = "0819465879",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Zinc Oxide Materials and Devices II",

note = "Zinc Oxide Materials and Devices II ; Conference date: 21-01-2007 Through 24-01-2007",

}

Minder, K, Teherani, FH, Rogers, D, Bayram, C, McClintock, R, Kung, P & Razeghi, M 2007, Etching of ZnO towards the Development of ZnO Homostructure LEDs. in Zinc Oxide Materials and Devices II., 64740Q, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6474, Zinc Oxide Materials and Devices II, San Jose, CA, United States, 1/21/07. https://doi.org/10.1117/12.712784

TY - GEN

T1 - Etching of ZnO towards the Development of ZnO Homostructure LEDs

AU - Minder, Kathryn

AU - Teherani, Ferechteh Hosseini

AU - Rogers, Dave

AU - Bayram, Can

AU - McClintock, Ryan

AU - Kung, Patrick

AU - Razeghi, Manijeh

PY - 2007

Y1 - 2007

N2 - Although ZnO has recently gained much interest as an alternative to the III-Nitride material system, the development of ZnO based optoelectonic devices is still in its infancy. Significant material breakthroughs in p-type doping of ZnO thin films and improvements in crystal growth techniques have recently been achieved, making the development of optoelectonic devices possible. ZnO is known to be an efficient UV-emitting material (∼380 nm) at room temperature, optical UV lasing of ZnO has been achieved, and both homojunction and hybrid heterojunction LEDs have been demonstrated. In this paper, processing techniques are explored towards the achievement of a homo-junction ZnO LED. First, a survey of current ZnO processing methods is presented, followed by the results of our processing research. Specifically, we have examined etching through an n-ZnO layer to expose and make contact to a p-ZnO layer.

AB - Although ZnO has recently gained much interest as an alternative to the III-Nitride material system, the development of ZnO based optoelectonic devices is still in its infancy. Significant material breakthroughs in p-type doping of ZnO thin films and improvements in crystal growth techniques have recently been achieved, making the development of optoelectonic devices possible. ZnO is known to be an efficient UV-emitting material (∼380 nm) at room temperature, optical UV lasing of ZnO has been achieved, and both homojunction and hybrid heterojunction LEDs have been demonstrated. In this paper, processing techniques are explored towards the achievement of a homo-junction ZnO LED. First, a survey of current ZnO processing methods is presented, followed by the results of our processing research. Specifically, we have examined etching through an n-ZnO layer to expose and make contact to a p-ZnO layer.

KW - Etching

KW - Light-emitting diode

KW - Processing

KW - Ultraviolet

KW - ZnO

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DO - 10.1117/12.712784

M3 - Conference contribution

AN - SCOPUS:34248667010

SN - 0819465879

SN - 9780819465870

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Zinc Oxide Materials and Devices II

T2 - Zinc Oxide Materials and Devices II

Y2 - 21 January 2007 through 24 January 2007

ER -

Etching of ZnO towards the Development of ZnO Homostructure LEDs

Abstract

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Keywords

ASJC Scopus subject areas

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