Evaluating the size-dependent quantum efficiency loss in a SiO 2-Y2O3 hybrid gated type-II InAs/GaSb long-infrared photodetector array

G. Chen; A. M. Hoang; M. Razeghi

doi:10.1063/1.4868486

Evaluating the size-dependent quantum efficiency loss in a SiO ₂-Y₂O₃ hybrid gated type-II InAs/GaSb long-infrared photodetector array

G. Chen, A. M. Hoang, M. Razeghi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Growing Y₂O₃ on 20 nm SiO₂ to passivate a 11 μm 50% cut-off wavelength long-wavelength infrared type-II superlattice gated photodetector array reduces its saturated gate bias (V_G,sat) to -7 V. Size-dependent quantum efficiency (QE) losses are evaluated from 400 μm to 57 μm size gated photodiode. Evolution of QE of the 57 μm gated photodiode with gate bias and diode operation bias reveals different surface recombination mechanisms. At 77 K and V_G,sat, the 57 μm gated photodiode exhibits QE enhancement from 53% to 63%, and it has 1.2 × 10^-5 A/cm² dark current density at -200 mV, and a specific detectivity of 2.3 × 10¹² Jones.

Original language	English (US)
Article number	103509
Journal	Applied Physics Letters
Volume	104
Issue number	10
DOIs	https://doi.org/10.1063/1.4868486
State	Published - Mar 10 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4868486

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title = "Evaluating the size-dependent quantum efficiency loss in a SiO 2-Y2O3 hybrid gated type-II InAs/GaSb long-infrared photodetector array",

abstract = "Growing Y2O3 on 20 nm SiO2 to passivate a 11 μm 50% cut-off wavelength long-wavelength infrared type-II superlattice gated photodetector array reduces its saturated gate bias (VG,sat) to -7 V. Size-dependent quantum efficiency (QE) losses are evaluated from 400 μm to 57 μm size gated photodiode. Evolution of QE of the 57 μm gated photodiode with gate bias and diode operation bias reveals different surface recombination mechanisms. At 77 K and VG,sat, the 57 μm gated photodiode exhibits QE enhancement from 53% to 63%, and it has 1.2 × 10-5 A/cm2 dark current density at -200 mV, and a specific detectivity of 2.3 × 1012 Jones.",

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AU - Hoang, A. M.

AU - Razeghi, M.

PY - 2014/3/10

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AB - Growing Y2O3 on 20 nm SiO2 to passivate a 11 μm 50% cut-off wavelength long-wavelength infrared type-II superlattice gated photodetector array reduces its saturated gate bias (VG,sat) to -7 V. Size-dependent quantum efficiency (QE) losses are evaluated from 400 μm to 57 μm size gated photodiode. Evolution of QE of the 57 μm gated photodiode with gate bias and diode operation bias reveals different surface recombination mechanisms. At 77 K and VG,sat, the 57 μm gated photodiode exhibits QE enhancement from 53% to 63%, and it has 1.2 × 10-5 A/cm2 dark current density at -200 mV, and a specific detectivity of 2.3 × 1012 Jones.

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Evaluating the size-dependent quantum efficiency loss in a SiO ₂-Y₂O₃ hybrid gated type-II InAs/GaSb long-infrared photodetector array

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