Evaluation of the band offsets of GaAs/GaInP multilayers by electroreflectance

Manijeh Razeghi*, D. Yang, James W. Garland, Zhijie Zhang, Dazhong Xue

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We report the first band offset measurement of GaAs/Ga0.51In0.49P multiquantum wells and superlattices by electrolyte electroreflectance spectroscopy. The conduction and valence band discontinuities ΔEc = 159 ± 4 meV and ΔEv = 388 ± 6 meV have been measured. The values found for the conduction band, heavy-hole and light-hole masses in the GaInP barriers and GaAs wells and for the split-off well mass are in excellent agreement with the literature. The intraband, intersubband transition energies, which are important for III - V infrared detection devices, also were directly measured.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages130-138
Number of pages9
ISBN (Print)0819408379
StatePublished - Dec 1 1992
EventAdvanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication - Somerset, NJ, USA
Duration: Mar 23 1992Mar 26 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1676
ISSN (Print)0277-786X

Other

OtherAdvanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
CitySomerset, NJ, USA
Period3/23/923/26/92

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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