Evidence for shallow implantation during the growth of bismuth nanocrystals by pulsed laser deposition

J. P. Barnesa; A. K. Petford-Long; A. Suárez-García; R. Serna

doi:10.1063/1.1564878

Evidence for shallow implantation during the growth of bismuth nanocrystals by pulsed laser deposition

J. P. Barnesa^*, A. K. Petford-Long, A. Suárez-García, R. Serna

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The shallow implantation of Bi species was analyzed for energy densities above 2 Jcm^-2. The implantation range was shown to depend on the energy density used for ablation, which was related to the velocity of the Bi atoms and ions in the plasma. The kinetic energy of the Bi species in the plume generated at laser energy densities above 2 J cm^-2 was estimated to be around 200 eV.

Original language	English (US)
Pages (from-to)	6396-6398
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	10 1
DOIs	https://doi.org/10.1063/1.1564878
State	Published - May 15 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1564878

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title = "Evidence for shallow implantation during the growth of bismuth nanocrystals by pulsed laser deposition",

abstract = "The shallow implantation of Bi species was analyzed for energy densities above 2 Jcm-2. The implantation range was shown to depend on the energy density used for ablation, which was related to the velocity of the Bi atoms and ions in the plasma. The kinetic energy of the Bi species in the plume generated at laser energy densities above 2 J cm-2 was estimated to be around 200 eV.",

author = "Barnesa, {J. P.} and Petford-Long, {A. K.} and A. Su{\'a}rez-Garc{\'i}a and R. Serna",

year = "2003",

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doi = "10.1063/1.1564878",

language = "English (US)",

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journal = "Journal of Applied Physics",

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T1 - Evidence for shallow implantation during the growth of bismuth nanocrystals by pulsed laser deposition

AU - Barnesa, J. P.

AU - Petford-Long, A. K.

AU - Suárez-García, A.

AU - Serna, R.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - The shallow implantation of Bi species was analyzed for energy densities above 2 Jcm-2. The implantation range was shown to depend on the energy density used for ablation, which was related to the velocity of the Bi atoms and ions in the plasma. The kinetic energy of the Bi species in the plume generated at laser energy densities above 2 J cm-2 was estimated to be around 200 eV.

AB - The shallow implantation of Bi species was analyzed for energy densities above 2 Jcm-2. The implantation range was shown to depend on the energy density used for ablation, which was related to the velocity of the Bi atoms and ions in the plasma. The kinetic energy of the Bi species in the plume generated at laser energy densities above 2 J cm-2 was estimated to be around 200 eV.

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DO - 10.1063/1.1564878

M3 - Article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Evidence for shallow implantation during the growth of bismuth nanocrystals by pulsed laser deposition

Abstract

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