Evidence for shallow implantation during the growth of bismuth nanocrystals by pulsed laser deposition

J. P. Barnesa*, A. K. Petford-Long, A. Suárez-García, R. Serna

*Corresponding author for this work

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

The shallow implantation of Bi species was analyzed for energy densities above 2 Jcm-2. The implantation range was shown to depend on the energy density used for ablation, which was related to the velocity of the Bi atoms and ions in the plasma. The kinetic energy of the Bi species in the plume generated at laser energy densities above 2 J cm-2 was estimated to be around 200 eV.

Original languageEnglish (US)
Pages (from-to)6396-6398
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number10 1
DOIs
StatePublished - May 15 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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