The wet chemical treatment using SeS2 is an inexpensive and simple method of depositing selenium on GaAs surfaces. This treatment improves the electronic properties of the surface as seen from the increase in photoluminescence intensity. We present our results on surface structural investigations of GaAs(110) surface passivated by SeS2 treatment using atomic force microscopy. Our results show that SeS2 treatment can passivate the GaAs(110) surface forming ordered overlayers on it.
ASJC Scopus subject areas
- Physics and Astronomy(all)