Evidence for the formation of ordered layers on SeS2 treated GaAs(110) using atomic force microscopy

Beena Annie Kuruvilla; A. Datta; G. S. Shekhawat; A. K. Sharma; P. D. Vyas; R. P. Gupta; S. K. Kulkarni

doi:10.1063/1.363703

Evidence for the formation of ordered layers on SeS₂ treated GaAs(110) using atomic force microscopy

Beena Annie Kuruvilla^*, A. Datta, G. S. Shekhawat, A. K. Sharma, P. D. Vyas, R. P. Gupta, S. K. Kulkarni

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The wet chemical treatment using SeS₂ is an inexpensive and simple method of depositing selenium on GaAs surfaces. This treatment improves the electronic properties of the surface as seen from the increase in photoluminescence intensity. We present our results on surface structural investigations of GaAs(110) surface passivated by SeS₂ treatment using atomic force microscopy. Our results show that SeS2 treatment can passivate the GaAs(110) surface forming ordered overlayers on it.

Original language	English (US)
Pages (from-to)	6274-6278
Number of pages	5
Journal	Journal of Applied Physics
Volume	80
Issue number	11
DOIs	https://doi.org/10.1063/1.363703
State	Published - Dec 1 1996

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General Physics and Astronomy

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title = "Evidence for the formation of ordered layers on SeS2 treated GaAs(110) using atomic force microscopy",

abstract = "The wet chemical treatment using SeS2 is an inexpensive and simple method of depositing selenium on GaAs surfaces. This treatment improves the electronic properties of the surface as seen from the increase in photoluminescence intensity. We present our results on surface structural investigations of GaAs(110) surface passivated by SeS2 treatment using atomic force microscopy. Our results show that SeS2 treatment can passivate the GaAs(110) surface forming ordered overlayers on it.",

author = "Kuruvilla, {Beena Annie} and A. Datta and Shekhawat, {G. S.} and Sharma, {A. K.} and Vyas, {P. D.} and Gupta, {R. P.} and Kulkarni, {S. K.}",

year = "1996",

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T1 - Evidence for the formation of ordered layers on SeS2 treated GaAs(110) using atomic force microscopy

AU - Kuruvilla, Beena Annie

AU - Datta, A.

AU - Shekhawat, G. S.

AU - Sharma, A. K.

AU - Vyas, P. D.

AU - Gupta, R. P.

AU - Kulkarni, S. K.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - The wet chemical treatment using SeS2 is an inexpensive and simple method of depositing selenium on GaAs surfaces. This treatment improves the electronic properties of the surface as seen from the increase in photoluminescence intensity. We present our results on surface structural investigations of GaAs(110) surface passivated by SeS2 treatment using atomic force microscopy. Our results show that SeS2 treatment can passivate the GaAs(110) surface forming ordered overlayers on it.

AB - The wet chemical treatment using SeS2 is an inexpensive and simple method of depositing selenium on GaAs surfaces. This treatment improves the electronic properties of the surface as seen from the increase in photoluminescence intensity. We present our results on surface structural investigations of GaAs(110) surface passivated by SeS2 treatment using atomic force microscopy. Our results show that SeS2 treatment can passivate the GaAs(110) surface forming ordered overlayers on it.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Evidence for the formation of ordered layers on SeS₂ treated GaAs(110) using atomic force microscopy

Abstract

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