Evidence for the formation of ordered layers on SeS2 treated GaAs(110) using atomic force microscopy

Beena Annie Kuruvilla*, A. Datta, G. S. Shekhawat, A. K. Sharma, P. D. Vyas, R. P. Gupta, S. K. Kulkarni

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The wet chemical treatment using SeS2 is an inexpensive and simple method of depositing selenium on GaAs surfaces. This treatment improves the electronic properties of the surface as seen from the increase in photoluminescence intensity. We present our results on surface structural investigations of GaAs(110) surface passivated by SeS2 treatment using atomic force microscopy. Our results show that SeS2 treatment can passivate the GaAs(110) surface forming ordered overlayers on it.

Original languageEnglish (US)
Pages (from-to)6274-6278
Number of pages5
JournalJournal of Applied Physics
Volume80
Issue number11
DOIs
StatePublished - Dec 1 1996

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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