Excitation properties of Er-doped GaP from photoluminescence and high pressure studies

T. D. Culp*, X. Z. Wang, T. F. Kuech, B. W. Wessels, K. L. Bray

*Corresponding author for this work

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

The photoluminescence properties of MOCVD GaP:Er were investigated as a function of temperature, applied hydrostatic pressure, and excitation wavelength. Four sharp peaks are observed on the high energy side of the 1.54 μm Er3+ emission. These peaks are selectively excited by below-gap energies and have a significantly shorter lifetime than the main Er3+ emission, suggesting that at least two distinct Er3+ centers contribute to the luminescence. The low temperature photoluminescence excitation (PLE) spectrum of the 1.54 μm emission was also measured. Strong broad excitation of the Er3+ centers occurs with energies well below the indirect bandgap energy. In fact, the Er3+ emission intensity is significantly stronger when excited with below-gap wavelengths than with above-gap wavelengths. This result has been explained in terms of competition between Er3+ excitation and nonradiative deep level recombination for free carriers under above-gap excitation. With below-gap excitation, carriers are promoted directly into the Er3+ excitation pathway via absorption at an erbium-related trap. At 42 kbar, below-gap excitation is no longer more efficient than above-gap excitation, suggesting that competitive capture of free carriers by deep levels has been reduced.

Original languageEnglish (US)
Pages (from-to)279-284
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume422
StatePublished - Dec 1 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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