Abstract
Exciton density of states broadened by compositional disorder in the group-III nitride quantum well is calculated. The excitonic photoluminescence linewidth is estimated and related to the material parameters of the alloy for two limiting cases of two-dimensional (2D) and three-dimensional excitons in the quantum well. It is shown that the effect of the compositional fluctuations depends on dimensionality of the exciton: the 2D excitons are more sensitive to the inhomogeneities than 3D ones. The broad near-band-gap energy states distribution for quasi-two-dimensional excitons is consistent with the experimental evidence of the spontaneous and stimulated emissions from excitonic states localized on compositional fluctuations.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 9783-9786 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 59 |
| Issue number | 15 |
| DOIs | |
| State | Published - 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics