Exciton localization in group-iii nitride quantum wells

V. I. Litvinov, M. Razeghi

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Exciton density of states broadened by compositional disorder in the group-III nitride quantum well is calculated. The excitonic photoluminescence linewidth is estimated and related to the material parameters of the alloy for two limiting cases of two-dimensional (2D) and three-dimensional excitons in the quantum well. It is shown that the effect of the compositional fluctuations depends on dimensionality of the exciton: the 2D excitons are more sensitive to the inhomogeneities than 3D ones. The broad near-band-gap energy states distribution for quasi-two-dimensional excitons is consistent with the experimental evidence of the spontaneous and stimulated emissions from excitonic states localized on compositional fluctuations.

Original languageEnglish (US)
Pages (from-to)9783-9786
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number15
DOIs
StatePublished - 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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