Exciton density of states broadened by compositional disorder in the group-III nitride quantum well is calculated. The excitonic photoluminescence linewidth is estimated and related to the material parameters of the alloy for two limiting cases of two-dimensional (2D) and three-dimensional excitons in the quantum well. It is shown that the effect of the compositional fluctuations depends on dimensionality of the exciton: the 2D excitons are more sensitive to the inhomogeneities than 3D ones. The broad near-band-gap energy states distribution for quasi-two-dimensional excitons is consistent with the experimental evidence of the spontaneous and stimulated emissions from excitonic states localized on compositional fluctuations.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics