Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

John A. Belot; Richard J. McNeely; Anchuan Wang; Charles J. Reedy; Tobin J. Marks; Glenn P.A. Yap; Arnold L. Rheingold

doi:10.1557/JMR.1999.0004

Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

John A. Belot, Richard J. McNeely, Anchuan Wang, Charles J. Reedy, Tobin J. Marks^*, Glenn P.A. Yap, Arnold L. Rheingold

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)₄ and Zr(dpm)₄ (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)₂ (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl₄ or diketonate metathesis. Furthermore, Zr(tfacen)₂ is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

Original language	English (US)
Pages (from-to)	12-15
Number of pages	4
Journal	Journal of Materials Research
Volume	14
Issue number	1
DOIs	https://doi.org/10.1557/JMR.1999.0004
State	Published - 1999

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/JMR.1999.0004

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@article{c7ebb0d6bee6400dba4af7f4f5f4ff43,

title = "Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth",

abstract = "This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.",

author = "Belot, {John A.} and McNeely, {Richard J.} and Anchuan Wang and Reedy, {Charles J.} and Marks, {Tobin J.} and Yap, {Glenn P.A.} and Rheingold, {Arnold L.}",

note = "Funding Information: This research was supported by the National Science Foundation (DMR 91-20000) through the Science and Technology Center for Superconductivity, by NSF/ONR/DARPA (CHE-94219101/N00014-95-0717 and CHE9807042), and by the Northwestern University Materials Research Center (DMR-9632472). The University of Delaware acknowledges the National Science Foundation for their support of the purchase of the CCD-based diffractometer (CHE-9628768).",

year = "1999",

doi = "10.1557/JMR.1999.0004",

language = "English (US)",

volume = "14",

pages = "12--15",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Materials Research Society",

number = "1",

}

TY - JOUR

T1 - Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

AU - Belot, John A.

AU - McNeely, Richard J.

AU - Wang, Anchuan

AU - Reedy, Charles J.

AU - Marks, Tobin J.

AU - Yap, Glenn P.A.

AU - Rheingold, Arnold L.

N1 - Funding Information: This research was supported by the National Science Foundation (DMR 91-20000) through the Science and Technology Center for Superconductivity, by NSF/ONR/DARPA (CHE-94219101/N00014-95-0717 and CHE9807042), and by the Northwestern University Materials Research Center (DMR-9632472). The University of Delaware acknowledges the National Science Foundation for their support of the purchase of the CCD-based diffractometer (CHE-9628768).

PY - 1999

Y1 - 1999

N2 - This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

AB - This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

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Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

Abstract

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