TY - JOUR
T1 - Expeditious, scalable solution growth of metal oxide films by combustion blade coating for flexible electronics
AU - Wang, Binghao
AU - Guo, Peijun
AU - Zeng, Li
AU - Yu, Xia
AU - Sil, Aritra
AU - Huang, Wei
AU - Leonardi, Matthew J.
AU - Zhang, Xinan
AU - Wang, Gang
AU - Lu, Shaofeng
AU - Chen, Zhihua
AU - Bedzyk, Michael J.
AU - Schaller, Richard D.
AU - Marks, Tobin J.
AU - Facchetti, Antonio
N1 - Funding Information:
University Micro/Nano Fabrication Facility, Electron Probe Instrumentation Center Facility, Keck Interdisciplinary Surface Science Facility, and Scanned Probe Imaging and Development Facility of the Northwestern University Atomic and Nanoscale Characterization Experimental Center, which received support from the Soft and Hybrid Nanotechnology Experimental Resource (NSF Grant NNCI-1542205); the MRSEC Program (NSF Grant DMR-1720139); the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN.
Funding Information:
We thank the US–Israel Binational Science Foundation (Grant AGMT-2012250///02), the Northwestern University Materials Research Science and Engineering Center (MRSEC) (NSF Grant DMR-1720139), the Air Force Office of Scientific Research (Grant FA9550-18-1-0320), and Flexterra Corporation for support of this research. A.F. thanks the Shenzhen Peacock Plan Project (Grant KQTD20140630110339343) for support. This work was performed, in part, at the Center for Nanoscale Materials, a US Department of Energy Office of Science User Facility and supported by the US Department of Energy, Office of Science, under Contract DE-AC02-06CH11357. This work made use of the J. B. Cohen X-Ray Diffraction Facility, Northwestern University Micro/Nano Fabrication Facility, Electron Probe Instrumentation Center Facility, Keck Interdisciplinary Surface Science Facility, and Scanned Probe Imaging and Development Facility of the Northwestern University Atomic and Nanoscale Characterization Experimental Center, which received support from the Soft and Hybrid Nanotechnology Experimental Resource (NSF Grant NNCI-1542205); the MRSEC Program (NSF Grant DMR-1720139); the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN.
Funding Information:
Science and Engineering Center (MRSEC) (NSF Grant DMR-1720139), the Air Force Office of Scientific Research (Grant FA9550-18-1-0320), and Flexterra Corporation for support of this research. A.F. thanks the Shenzhen Peacock Plan Project (Grant KQTD20140630110339343) for support. This work was performed, in part, at the Center for Nanoscale Materials, a US Department of Energy Office of Science User Facility and supported by the US Department of Energy, Office of Science, under Contract DE-AC02-06CH11357. This work made use of the J. B. Cohen X-Ray Diffraction Facility, Northwestern
Funding Information:
ACKNOWLEDGMENTS. We thank the US–Israel Binational Science Foundation (Grant AGMT-2012250///02), the Northwestern University Materials Research
Publisher Copyright:
© 2019 National Academy of Sciences. All rights reserved.
PY - 2019/5/7
Y1 - 2019/5/7
N2 - Metal oxide (MO) semiconductor thin films prepared from solution typically require multiple hours of thermal annealing to achieve optimal lattice densification, efficient charge transport, and stable device operation, presenting a major barrier to roll-to-roll manufacturing. Here, we report a highly efficient, cofuel-assisted scalable combustion blade-coating (CBC) process for MO film growth, which involves introducing both a fluorinated fuel and a preannealing step to remove deleterious organic contaminants and promote complete combustion. Ultrafast reaction and metal–oxygen–metal (M-O-M) lattice condensation then occur within 10–60 s at 200–350 °C for representative MO semiconductor [indium oxide (In2O3), indium-zinc oxide (IZO), indium-gallium-zinc oxide (IGZO)] and dielectric [aluminum oxide (Al2O3)] films. Thus, wafer-scale CBC fabrication of IGZO-Al2O3 thin-film transistors (TFTs) (60-s annealing) with field-effect mobilities as high as ∼25 cm2 V−1 s−1 and negligible threshold voltage deterioration in a demanding 4,000-s bias stress test are realized. Combined with polymer dielectrics, the CBC-derived IGZO TFTs on polyimide substrates exhibit high flexibility when bent to a 3-mm radius, with performance bending stability over 1,000 cycles.
AB - Metal oxide (MO) semiconductor thin films prepared from solution typically require multiple hours of thermal annealing to achieve optimal lattice densification, efficient charge transport, and stable device operation, presenting a major barrier to roll-to-roll manufacturing. Here, we report a highly efficient, cofuel-assisted scalable combustion blade-coating (CBC) process for MO film growth, which involves introducing both a fluorinated fuel and a preannealing step to remove deleterious organic contaminants and promote complete combustion. Ultrafast reaction and metal–oxygen–metal (M-O-M) lattice condensation then occur within 10–60 s at 200–350 °C for representative MO semiconductor [indium oxide (In2O3), indium-zinc oxide (IZO), indium-gallium-zinc oxide (IGZO)] and dielectric [aluminum oxide (Al2O3)] films. Thus, wafer-scale CBC fabrication of IGZO-Al2O3 thin-film transistors (TFTs) (60-s annealing) with field-effect mobilities as high as ∼25 cm2 V−1 s−1 and negligible threshold voltage deterioration in a demanding 4,000-s bias stress test are realized. Combined with polymer dielectrics, the CBC-derived IGZO TFTs on polyimide substrates exhibit high flexibility when bent to a 3-mm radius, with performance bending stability over 1,000 cycles.
KW - Blade coating
KW - Combustion synthesis
KW - Solution process
KW - Thin-film transistor
KW - Ultrashort annealing time
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U2 - 10.1073/pnas.1901492116
DO - 10.1073/pnas.1901492116
M3 - Article
C2 - 31004056
AN - SCOPUS:85065626470
VL - 116
SP - 9230
EP - 9238
JO - Proceedings of the National Academy of Sciences of the United States of America
JF - Proceedings of the National Academy of Sciences of the United States of America
SN - 0027-8424
IS - 19
ER -