Abstract
This article presents experimental and computational studies of a phase shifting photolithographic technique that uses binary elastomeric phase masks in conformal contact with layers of photoresist. The work incorporates optimized masks formed by casting and curing prepolymers to the elastomer poly(dimethylsiloxane) against anisotropically etched structures of single crystal silicon on Si O2 Si. Scanning optical microscopy and full-vector finite element computations reveal the important near field and proximity optical effects. Representative structures fabricated with this technique, including several that exploit subtle features in the intensity distributions, illustrate some of the capabilities.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 828-835 |
| Number of pages | 8 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 24 |
| Issue number | 2 |
| DOIs | |
| State | Published - Mar 2006 |
Funding
This work was supported by the US Department of Energy. SOI masters, photoresist patterns, and lift-off structures were fabricated in the Microfabrication and Crystal Growth Facility and NSOM measurements were performed at the Laser and Spectroscopy Facility of the Frederick Seitz Materials Research Laboratory, all of which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. This work was also funded by partial support from National Science Foundation under Grant No. DMI 03-55532. SEM, AFM imaging, and finite element modeling (FEM) simulations were performed in the installations of the Imaging Group of the Beckman Institute for Advanced Science and Technology. One of the authors (J.M.) gratefully acknowledges a fellowship from the Fundação para a Ciência e Tecnologia, MCES, Portugal.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering