Experimental and computational studies of phase shift lithography with binary elastomeric masks

Joana Maria*, Viktor Malyarchuk, Jeff White, John A. Rogers

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

This article presents experimental and computational studies of a phase shifting photolithographic technique that uses binary elastomeric phase masks in conformal contact with layers of photoresist. The work incorporates optimized masks formed by casting and curing prepolymers to the elastomer poly(dimethylsiloxane) against anisotropically etched structures of single crystal silicon on Si O2 Si. Scanning optical microscopy and full-vector finite element computations reveal the important near field and proximity optical effects. Representative structures fabricated with this technique, including several that exploit subtle features in the intensity distributions, illustrate some of the capabilities.

Original languageEnglish (US)
Pages (from-to)828-835
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number2
DOIs
StatePublished - Mar 2006

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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