Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices

Bin Fang; Mario Carpentieri; Steven Louis; Vasyl Tiberkevich; Andrei Slavin; Ilya N. Krivorotov; Riccardo Tomasello; Anna Giordano; Hongwen Jiang; Jialin Cai; Yaming Fan; Zehong Zhang; Baoshun Zhang; Jordan A. Katine; Kang L. Wang; Pedram Khalili Amiri; Giovanni Finocchio; Zhongming Zeng

doi:10.1103/PhysRevApplied.11.014022

Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices

Bin Fang, Mario Carpentieri, Steven Louis, Vasyl Tiberkevich, Andrei Slavin, Ilya N. Krivorotov, Riccardo Tomasello, Anna Giordano, Hongwen Jiang, Jialin Cai, Yaming Fan, Zehong Zhang, Baoshun Zhang, Jordan A. Katine, Kang L. Wang, Pedram Khalili Amiri, Giovanni Finocchio, Zhongming Zeng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

Nonlinear dynamics has been the key ingredient to improve the performance, in terms of sensitivity, of biased resonant spintronic diodes beyond their semiconductor counterparts. We experimentally demonstrate a nonlinear regime broadband detection for nanoscale spintronic diodes (NSD) where the rectification properties are independent of the input microwave frequency, and compare the device performance with the state of the art Schottky diode for low-power rectification. This regime is achieved in magnetic tunnel junctions with a canted magnetization of the free layer. We further show that the developed NSD provides sufficient dc voltage to supply a low-power nanodevice - a black phosphorus photosensor. Our results could pave the way for using spintronic detectors as building blocks for self-powered nanosystems, such as implantable biomedical devices, wireless sensors, and portable electronics.

Original language	English (US)
Article number	014022
Journal	Physical Review Applied
Volume	11
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevApplied.11.014022
State	Published - Jan 10 2019

Funding

This work was supported the executive programme of scientific and technological cooperation between Italy and China funded by Ministero degli Affari Esteri e della Cooperazione Internazionale and the Minister Of Science and Technology of China of the People’s Republic of China (Grants No. CN16GR09 and No. 2016YFE0104100) and by the National Science Foundation of China (Grants No. 11474311 and No. 11804370). The work at the Oakland University was in part supported by the National Science Foundation of the USA (Grants No. EFMA-1641989 and No. ECCS-1708982), by a grant from DARPA, and by a grant from the Center for NanoFerroic Devices (CNFD) and Nanoelectronics Research Initiative (NRI). The work at UCLA was supported by the Nanoscale Engineering Research Centre on Translational Applications of Nanoscale Multiferroic Systems (TANMS). R.T. also thanks the project “ThunderSKY” funded from the Hellenic Foundation for Research and Innovation (HFRI) and the General Secretariat for Research and Technology (GSRT) under Grant No. 871.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevApplied.11.014022

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Fang, B., Carpentieri, M., Louis, S., Tiberkevich, V., Slavin, A., Krivorotov, I. N., Tomasello, R., Giordano, A., Jiang, H., Cai, J., Fan, Y., Zhang, Z., Zhang, B., Katine, J. A., Wang, K. L., Amiri, P. K., Finocchio, G., & Zeng, Z. (2019). Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices. Physical Review Applied, 11(1), Article 014022. https://doi.org/10.1103/PhysRevApplied.11.014022

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title = "Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices",

abstract = "Nonlinear dynamics has been the key ingredient to improve the performance, in terms of sensitivity, of biased resonant spintronic diodes beyond their semiconductor counterparts. We experimentally demonstrate a nonlinear regime broadband detection for nanoscale spintronic diodes (NSD) where the rectification properties are independent of the input microwave frequency, and compare the device performance with the state of the art Schottky diode for low-power rectification. This regime is achieved in magnetic tunnel junctions with a canted magnetization of the free layer. We further show that the developed NSD provides sufficient dc voltage to supply a low-power nanodevice - a black phosphorus photosensor. Our results could pave the way for using spintronic detectors as building blocks for self-powered nanosystems, such as implantable biomedical devices, wireless sensors, and portable electronics.",

author = "Bin Fang and Mario Carpentieri and Steven Louis and Vasyl Tiberkevich and Andrei Slavin and Krivorotov, {Ilya N.} and Riccardo Tomasello and Anna Giordano and Hongwen Jiang and Jialin Cai and Yaming Fan and Zehong Zhang and Baoshun Zhang and Katine, {Jordan A.} and Wang, {Kang L.} and Amiri, {Pedram Khalili} and Giovanni Finocchio and Zhongming Zeng",

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Fang, B, Carpentieri, M, Louis, S, Tiberkevich, V, Slavin, A, Krivorotov, IN, Tomasello, R, Giordano, A, Jiang, H, Cai, J, Fan, Y, Zhang, Z, Zhang, B, Katine, JA, Wang, KL, Amiri, PK, Finocchio, G & Zeng, Z 2019, 'Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices', Physical Review Applied, vol. 11, no. 1, 014022. https://doi.org/10.1103/PhysRevApplied.11.014022

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AU - Fang, Bin

AU - Carpentieri, Mario

AU - Louis, Steven

AU - Tiberkevich, Vasyl

AU - Slavin, Andrei

AU - Krivorotov, Ilya N.

AU - Tomasello, Riccardo

AU - Giordano, Anna

AU - Jiang, Hongwen

AU - Cai, Jialin

AU - Fan, Yaming

AU - Zhang, Zehong

AU - Zhang, Baoshun

AU - Katine, Jordan A.

AU - Wang, Kang L.

AU - Amiri, Pedram Khalili

AU - Finocchio, Giovanni

AU - Zeng, Zhongming

PY - 2019/1/10

Y1 - 2019/1/10

N2 - Nonlinear dynamics has been the key ingredient to improve the performance, in terms of sensitivity, of biased resonant spintronic diodes beyond their semiconductor counterparts. We experimentally demonstrate a nonlinear regime broadband detection for nanoscale spintronic diodes (NSD) where the rectification properties are independent of the input microwave frequency, and compare the device performance with the state of the art Schottky diode for low-power rectification. This regime is achieved in magnetic tunnel junctions with a canted magnetization of the free layer. We further show that the developed NSD provides sufficient dc voltage to supply a low-power nanodevice - a black phosphorus photosensor. Our results could pave the way for using spintronic detectors as building blocks for self-powered nanosystems, such as implantable biomedical devices, wireless sensors, and portable electronics.

AB - Nonlinear dynamics has been the key ingredient to improve the performance, in terms of sensitivity, of biased resonant spintronic diodes beyond their semiconductor counterparts. We experimentally demonstrate a nonlinear regime broadband detection for nanoscale spintronic diodes (NSD) where the rectification properties are independent of the input microwave frequency, and compare the device performance with the state of the art Schottky diode for low-power rectification. This regime is achieved in magnetic tunnel junctions with a canted magnetization of the free layer. We further show that the developed NSD provides sufficient dc voltage to supply a low-power nanodevice - a black phosphorus photosensor. Our results could pave the way for using spintronic detectors as building blocks for self-powered nanosystems, such as implantable biomedical devices, wireless sensors, and portable electronics.

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Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices

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