Experimental study of LCI lasers fabricated by single mocvd overgrowth followed by selective dopant diffusion

Edward H. Sargent; D. A. Suda; A. Margittai; F. R. Shepherd; M. Cleroux; G. Knight; N. Puetz; T. Makino; A. J. SpringThorpe; G. Chik; J. M. Xu

doi:10.1109/68.726741

Experimental study of LCI lasers fabricated by single mocvd overgrowth followed by selective dopant diffusion

Edward H. Sargent^*, D. A. Suda, A. Margittai, F. R. Shepherd, M. Cleroux, G. Knight, N. Puetz, T. Makino, A. J. SpringThorpe, G. Chik, J. M. Xu

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report the design, fabrication, and characterization of lateral current injection (LCI) lasers made using a single etch-and-regrowth followed by selective dopant diffusion. Devices are characterized electrically and optically from 10 to 300 K. Using the recently developed theory of the LCI laser, the threshold current, spontaneous efficiency, and stimulated efficiency are related to physical mechanisms that underlie the operation of this promising family of devices. We explore the prospects for LCI lasers to enable monolithic photonic integrated circuits and functional optoelectronic devices.

Original language	English (US)
Pages (from-to)	1536-1538
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	10
Issue number	11
DOIs	https://doi.org/10.1109/68.726741
State	Published - Nov 1998

Keywords

Integrated optoelectronics
Semiconductor device fabrication
Semiconductor device modeling
Semiconductor epitaxial layers
Semiconductor heterojunctions
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/68.726741

Cite this

@article{cab6f916637f40f488d25ed13ed2aba2,

title = "Experimental study of LCI lasers fabricated by single mocvd overgrowth followed by selective dopant diffusion",

abstract = "We report the design, fabrication, and characterization of lateral current injection (LCI) lasers made using a single etch-and-regrowth followed by selective dopant diffusion. Devices are characterized electrically and optically from 10 to 300 K. Using the recently developed theory of the LCI laser, the threshold current, spontaneous efficiency, and stimulated efficiency are related to physical mechanisms that underlie the operation of this promising family of devices. We explore the prospects for LCI lasers to enable monolithic photonic integrated circuits and functional optoelectronic devices.",

keywords = "Integrated optoelectronics, Semiconductor device fabrication, Semiconductor device modeling, Semiconductor epitaxial layers, Semiconductor heterojunctions, Semiconductor lasers",

author = "Sargent, {Edward H.} and Suda, {D. A.} and A. Margittai and Shepherd, {F. R.} and M. Cleroux and G. Knight and N. Puetz and T. Makino and SpringThorpe, {A. J.} and G. Chik and Xu, {J. M.}",

year = "1998",

month = nov,

doi = "10.1109/68.726741",

language = "English (US)",

volume = "10",

pages = "1536--1538",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Experimental study of LCI lasers fabricated by single mocvd overgrowth followed by selective dopant diffusion

AU - Sargent, Edward H.

AU - Suda, D. A.

AU - Margittai, A.

AU - Shepherd, F. R.

AU - Cleroux, M.

AU - Knight, G.

AU - Puetz, N.

AU - Makino, T.

AU - SpringThorpe, A. J.

AU - Chik, G.

AU - Xu, J. M.

PY - 1998/11

Y1 - 1998/11

N2 - We report the design, fabrication, and characterization of lateral current injection (LCI) lasers made using a single etch-and-regrowth followed by selective dopant diffusion. Devices are characterized electrically and optically from 10 to 300 K. Using the recently developed theory of the LCI laser, the threshold current, spontaneous efficiency, and stimulated efficiency are related to physical mechanisms that underlie the operation of this promising family of devices. We explore the prospects for LCI lasers to enable monolithic photonic integrated circuits and functional optoelectronic devices.

AB - We report the design, fabrication, and characterization of lateral current injection (LCI) lasers made using a single etch-and-regrowth followed by selective dopant diffusion. Devices are characterized electrically and optically from 10 to 300 K. Using the recently developed theory of the LCI laser, the threshold current, spontaneous efficiency, and stimulated efficiency are related to physical mechanisms that underlie the operation of this promising family of devices. We explore the prospects for LCI lasers to enable monolithic photonic integrated circuits and functional optoelectronic devices.

KW - Integrated optoelectronics

KW - Semiconductor device fabrication

KW - Semiconductor device modeling

KW - Semiconductor epitaxial layers

KW - Semiconductor heterojunctions

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0032207516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032207516&partnerID=8YFLogxK

U2 - 10.1109/68.726741

DO - 10.1109/68.726741

M3 - Article

AN - SCOPUS:0032207516

VL - 10

SP - 1536

EP - 1538

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 11

ER -

Experimental study of LCI lasers fabricated by single mocvd overgrowth followed by selective dopant diffusion

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this