Experimental study of LCI lasers fabricated by single mocvd overgrowth followed by selective dopant diffusion

Edward H. Sargent*, D. A. Suda, A. Margittai, F. R. Shepherd, M. Cleroux, G. Knight, N. Puetz, T. Makino, A. J. SpringThorpe, G. Chik, J. M. Xu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We report the design, fabrication, and characterization of lateral current injection (LCI) lasers made using a single etch-and-regrowth followed by selective dopant diffusion. Devices are characterized electrically and optically from 10 to 300 K. Using the recently developed theory of the LCI laser, the threshold current, spontaneous efficiency, and stimulated efficiency are related to physical mechanisms that underlie the operation of this promising family of devices. We explore the prospects for LCI lasers to enable monolithic photonic integrated circuits and functional optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)1536-1538
Number of pages3
JournalIEEE Photonics Technology Letters
Volume10
Issue number11
DOIs
StatePublished - Nov 1998

Keywords

  • Integrated optoelectronics
  • Semiconductor device fabrication
  • Semiconductor device modeling
  • Semiconductor epitaxial layers
  • Semiconductor heterojunctions
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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