Exploration of entire range of III–V semiconductors and their device applications

M. Razeghi, Y. H. Choi, X. He, C. J. Sun

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The most recent advances in III–V semiconductors, from wide band gap AlN to the new narrow band gap InTlSb material, are examined. Specifically, results for AlN, GaN, and their alloys are examined with a view to applications in the blue–ultraviolet spectral range. For operation in the long wavelength infrared range (8–12 μm), the potential and realisation of a new III–V alloy, InTlSb, are presented. The GaInAsP/GaAs system has also been investigated as an alternative to the widely used AlGaAs/GaAs system for device applications in the intermediate spectral range. Attention is given to the crystal growth technique and physical properties of these III–V semiconductors. Demonstrations and the performance in service of several devices based on these material systems, such as high power GaInAsP diode lasers and InTlSb infrared detectors, are described.

Original languageEnglish (US)
Pages (from-to)3-30
Number of pages28
JournalMaterials Science and Technology (United Kingdom)
Volume11
Issue number1
DOIs
StatePublished - Jan 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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