Abstract
Narrow band gap III-V semiconductors have long been searched for its applications to long-wavelength infrared photodetectors. Rapid development in epitaxial growth techniques has made it possible to explore the unprecedented alloys. In this article, we report on the growth and characterization of novel InSbBi alloy for uncooled infrared photodetector applications. The InSbBi layers were grown on InSb and GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The structural, optical, and electrical properties of this material were investigated in detail. Photoconductive detectors fabricated from InSbBi were demonstrated in the temperature range from 77 K to 300 K. InSbBi photoconductive detector exhibited a 9.3 μm cutoff wavelength at 77 K. The estimated Johnson noise limited detectivity of an InSb0.96Bi0.04 detector at 7 μm was 4.7 × 108 cmHz1/2/W at 77 K. InSb0.95Bi0.05 detector operating at room temperature showed a 12 μm cutoff wavelength. The maximum responsivity in an InSb0.95Bi0.05 detector was 7.0 × 10-3 V/W and the corresponding Johnson-noise limited detectivity was 4.1 × 106 cmHz1/2/W. These results of InSbBi photodetectors showed the feasibility of using III-V ternary alloy for long-wavelength infrared photodetector applications as an alternative to HgCdTe.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 25-36 |
| Number of pages | 12 |
| Journal | Opto-electronics Review |
| Volume | 1998 |
| Issue number | 1 |
| State | Published - 1998 |
ASJC Scopus subject areas
- Radiation
- General Materials Science
- Electrical and Electronic Engineering