INIS
photodetectors
100%
alloys
50%
applications
50%
voltage
50%
temperature range 0273-0400 k
50%
noise
50%
resolution
25%
growth
25%
x radiation
25%
x-ray diffraction
25%
energy
25%
substrates
25%
investigations
25%
layers
25%
exploration
25%
chemical vapor deposition
25%
low pressure
25%
epitaxy
25%
carrier lifetime
25%
gallium arsenides
25%
Engineering
Photodetector
100%
Responsivity
75%
Electric Potential
50%
Room Temperature
50%
Measurement
50%
Alloy
50%
Applications
50%
Energy Gap
25%
Gaas Substrate
25%
High Resolution
25%
Epitaxial Film
25%
Ray Diffraction
25%
Carrier Lifetime
25%
Natural Resources Exploration
25%
Low Pressure
25%
Chemistry
Voltage
50%
Ambient Reaction Temperature
50%
Alloy
50%
Application
50%
Noise
50%
Band Gap
25%
Epitaxial Film
25%
Photoconductivity
25%
Procedure
25%
Analytical Method
25%
Energy
25%
Metallorganic Chemical Vapor Deposition
25%
Physics
Photometer
100%
Room Temperature
50%
Electric Potential
50%
Alloy
50%
Utilization
50%
High Resolution
25%
Metalorganic Chemical Vapor Deposition
25%
Growth
25%
Exploration
25%
Material Science
Detector
50%
Epitaxial Layer
25%
Carrier Lifetime
25%
Material
25%