Exploratory combustion synthesis: Amorphous indium yttrium oxide for thin-film transistors

Jonathan W. Hennek, Myung Gil Kim, Mercouri Kanatzidis*, Antonio Facchetti, Tobin Jay Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

108 Scopus citations


We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and polycrystalline IYO films were grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm 2 V -1 s -1 (T anneal = 300 °C) and 5.0 cm 2 V -1 s -1 (T anneal = 250 °C) for 2 V operation.

Original languageEnglish (US)
Pages (from-to)9593-9596
Number of pages4
JournalJournal of the American Chemical Society
Issue number23
StatePublished - Jun 13 2012

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry


Dive into the research topics of 'Exploratory combustion synthesis: Amorphous indium yttrium oxide for thin-film transistors'. Together they form a unique fingerprint.

Cite this