We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and polycrystalline IYO films were grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm 2 V -1 s -1 (T anneal = 300 °C) and 5.0 cm 2 V -1 s -1 (T anneal = 250 °C) for 2 V operation.
ASJC Scopus subject areas
- Colloid and Surface Chemistry