Exposure mechanism of fullerene derivative electron beam resists

A. P.G. Robinson*, R. E. Palmer, T. Tada, T. Kanayama, E. J. Shelley, D. Philp, J. A. Preece

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

We report systematic studies of the response of C60 derivatives to electron beam irradiation. Films of nine different methanofullerene C60 monoadducts, produced by spin coating on Si surfaces, were irradiated with a 20 keV electron beam. All exhibited negative tone resist behaviour with a sensitivity much higher than that of C60. In the case of derivatives with two polyether chains, the sensitivity was found to be linearly dependent upon the derivative mass, consistent with an increasing electron cross-section for larger derivatives. Features with widths of 20 nm were produced using these compounds, and the etch ratios of the compounds were found to be more than twice those of a standard novolac-based resist.

Original languageEnglish (US)
Pages (from-to)469-474
Number of pages6
JournalChemical Physics Letters
Volume312
Issue number5-6
DOIs
StatePublished - Oct 29 1999

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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