Extended short wavelength infrared heterojunction phototransistors based on type II superlattices

Arash Dehzangi, Ryan McClintock, Donghai Wu, Abbas Haddadi, Romain Chevallier, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A two terminal extended short wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With the base thickness of 40 nm, the device exhibited a 100% cut-off wavelength of ∼2.3 μm at 300 K. The saturated peak responsivity value is 320.5 A/W at 300 K, under front-side illumination without any antireflection coating. A saturated optical gain of 245 at 300 K was measured. At the same temperature, the device exhibited a collector dark current density (at unity optical gain) and a DC current gain of 7.8 × 10-3 A/cm2 and 1100, respectively. The device exhibited a saturated dark current shot noise limited specific detectivity of 4.9 × 1011 cm·Hz1/2/W at 300 K which remains constant over a broad range of wavelengths and applied biases.

Original languageEnglish (US)
Article number191109
JournalApplied Physics Letters
Volume114
Issue number19
DOIs
StatePublished - May 13 2019

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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