Extended short wavelength infrared heterojunction phototransistors based on type II superlattices

Arash Dehzangi; Ryan P McClintock; Donghai Wu; Abbas Haddadi; Romain Chevallier; Manijeh Razeghi

doi:10.1063/1.5093560

Extended short wavelength infrared heterojunction phototransistors based on type II superlattices

Arash Dehzangi, Ryan P McClintock, Donghai Wu, Abbas Haddadi, Romain Chevallier, Manijeh Razeghi^*

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A two terminal extended short wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With the base thickness of 40 nm, the device exhibited a 100% cut-off wavelength of ∼2.3 μm at 300 K. The saturated peak responsivity value is 320.5 A/W at 300 K, under front-side illumination without any antireflection coating. A saturated optical gain of 245 at 300 K was measured. At the same temperature, the device exhibited a collector dark current density (at unity optical gain) and a DC current gain of 7.8 × 10^-3 A/cm² and 1100, respectively. The device exhibited a saturated dark current shot noise limited specific detectivity of 4.9 × 10¹¹ cm·Hz^1/2/W at 300 K which remains constant over a broad range of wavelengths and applied biases.

Original language	English (US)
Article number	191109
Journal	Applied Physics Letters
Volume	114
Issue number	19
DOIs	https://doi.org/10.1063/1.5093560
State	Published - May 13 2019

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5093560

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title = "Extended short wavelength infrared heterojunction phototransistors based on type II superlattices",

abstract = "A two terminal extended short wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With the base thickness of 40 nm, the device exhibited a 100% cut-off wavelength of ∼2.3 μm at 300 K. The saturated peak responsivity value is 320.5 A/W at 300 K, under front-side illumination without any antireflection coating. A saturated optical gain of 245 at 300 K was measured. At the same temperature, the device exhibited a collector dark current density (at unity optical gain) and a DC current gain of 7.8 × 10-3 A/cm2 and 1100, respectively. The device exhibited a saturated dark current shot noise limited specific detectivity of 4.9 × 1011 cm·Hz1/2/W at 300 K which remains constant over a broad range of wavelengths and applied biases.",

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T1 - Extended short wavelength infrared heterojunction phototransistors based on type II superlattices

AU - Dehzangi, Arash

AU - McClintock, Ryan P

AU - Wu, Donghai

AU - Haddadi, Abbas

AU - Chevallier, Romain

AU - Razeghi, Manijeh

PY - 2019/5/13

Y1 - 2019/5/13

N2 - A two terminal extended short wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With the base thickness of 40 nm, the device exhibited a 100% cut-off wavelength of ∼2.3 μm at 300 K. The saturated peak responsivity value is 320.5 A/W at 300 K, under front-side illumination without any antireflection coating. A saturated optical gain of 245 at 300 K was measured. At the same temperature, the device exhibited a collector dark current density (at unity optical gain) and a DC current gain of 7.8 × 10-3 A/cm2 and 1100, respectively. The device exhibited a saturated dark current shot noise limited specific detectivity of 4.9 × 1011 cm·Hz1/2/W at 300 K which remains constant over a broad range of wavelengths and applied biases.

AB - A two terminal extended short wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With the base thickness of 40 nm, the device exhibited a 100% cut-off wavelength of ∼2.3 μm at 300 K. The saturated peak responsivity value is 320.5 A/W at 300 K, under front-side illumination without any antireflection coating. A saturated optical gain of 245 at 300 K was measured. At the same temperature, the device exhibited a collector dark current density (at unity optical gain) and a DC current gain of 7.8 × 10-3 A/cm2 and 1100, respectively. The device exhibited a saturated dark current shot noise limited specific detectivity of 4.9 × 1011 cm·Hz1/2/W at 300 K which remains constant over a broad range of wavelengths and applied biases.

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Extended short wavelength infrared heterojunction phototransistors based on type II superlattices

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