Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier

A. Haddadi, R. Chevallier, A. Dehzangi, M. Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate have been demonstrated. An AlAs0.10Sb0.90/GaSb H-structure superlattice design was used as the large-bandgap electron-barrier in these photodetectors. The photodetector is designed to have a 100% cut-off wavelength of ∼2.8 μm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.65 A/W at 1.9 μm, corresponding to a quantum efficiency of 41% at zero bias under front-side illumination, without any anti-reflection coating. With an R × A of 78 Ω·cm2 and a dark current density of 8 × 10−3 A/cm2 under −400 mV applied bias at 300 K, the nBn photodetector exhibited a specific detectivity of 1.51 × 1010 cm·Hz1/2/W. At 150 K, the photodetector exhibited a dark current density of 9.5 × 10−9 A/cm2 and a quantum efficiency of 50%, resulting in a detectivity of 1.12 × 1013 cm·Hz1/2/W.

Original languageEnglish (US)
Article number101104
JournalApplied Physics Letters
Volume110
Issue number10
DOIs
StatePublished - Mar 6 2017

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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