Extremely high electron mobility in a GaAs-GaxIn1-xP heterostructure grown by metalorganic chemical vapor deposition

M. Razeghi; M. Defour; F. Omnes; M. Dobers; J. P. Vieren; Y. Guldner

doi:10.1063/1.101851

Extremely high electron mobility in a GaAs-Ga_xIn_1-xP heterostructure grown by metalorganic chemical vapor deposition

M. Razeghi^*, M. Defour, F. Omnes, M. Dobers, J. P. Vieren, Y. Guldner

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

On studying the magnetoresistivity of GaAs-GaInP heterostructures grown by low-pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquid-helium temperatures, we have observed extremely high electron mobilities. Using the persistent photoconductivity effect, by illumination with red light, we reached a mobility of 780 000 cm²/(V s) at an electron density of 4.1×10¹¹ cm^-2. This high electron mobility is confirmed by cyclotron resonance measurements.

Original language	English (US)
Pages (from-to)	457-459
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	5
DOIs	https://doi.org/10.1063/1.101851
State	Published - 1989

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "On studying the magnetoresistivity of GaAs-GaInP heterostructures grown by low-pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquid-helium temperatures, we have observed extremely high electron mobilities. Using the persistent photoconductivity effect, by illumination with red light, we reached a mobility of 780 000 cm2/(V s) at an electron density of 4.1×1011 cm-2. This high electron mobility is confirmed by cyclotron resonance measurements.",

author = "M. Razeghi and M. Defour and F. Omnes and M. Dobers and Vieren, {J. P.} and Y. Guldner",

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T1 - Extremely high electron mobility in a GaAs-GaxIn1-xP heterostructure grown by metalorganic chemical vapor deposition

AU - Razeghi, M.

AU - Defour, M.

AU - Omnes, F.

AU - Dobers, M.

AU - Vieren, J. P.

AU - Guldner, Y.

PY - 1989

Y1 - 1989

N2 - On studying the magnetoresistivity of GaAs-GaInP heterostructures grown by low-pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquid-helium temperatures, we have observed extremely high electron mobilities. Using the persistent photoconductivity effect, by illumination with red light, we reached a mobility of 780 000 cm2/(V s) at an electron density of 4.1×1011 cm-2. This high electron mobility is confirmed by cyclotron resonance measurements.

AB - On studying the magnetoresistivity of GaAs-GaInP heterostructures grown by low-pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquid-helium temperatures, we have observed extremely high electron mobilities. Using the persistent photoconductivity effect, by illumination with red light, we reached a mobility of 780 000 cm2/(V s) at an electron density of 4.1×1011 cm-2. This high electron mobility is confirmed by cyclotron resonance measurements.

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