Extremely high electron mobility in a GaAs-GaxIn1-xP heterostructure grown by metalorganic chemical vapor deposition

M. Razeghi*, M. Defour, F. Omnes, M. Dobers, J. P. Vieren, Y. Guldner

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Scopus citations


On studying the magnetoresistivity of GaAs-GaInP heterostructures grown by low-pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquid-helium temperatures, we have observed extremely high electron mobilities. Using the persistent photoconductivity effect, by illumination with red light, we reached a mobility of 780 000 cm2/(V s) at an electron density of 4.1×1011 cm-2. This high electron mobility is confirmed by cyclotron resonance measurements.

Original languageEnglish (US)
Pages (from-to)457-459
Number of pages3
JournalApplied Physics Letters
Issue number5
StatePublished - 1989

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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