Fabrication and characteristics of multi-terminal SINIS devices

I. P. Nevirkovets*, O. Chernyashevskyy, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We fabricated and measured multi-terminal SINIS devices (where S, I, and N denote a superconductor, an insulator, and a normal metal, respectively) with the Nb/Al/AlOx/Al/AlOx/Al/Nb structure. The multilayered SINIS structure was fabricated in-situ using sputter deposition of Nb and Al, and thermal oxidation of the Al layers to grow the tunnel barriers. Devices with a characteristic size of about 10 μm were formed via an optical-lithography process that included making an electrical contact to the middle Al layer (16-19 nm thick). Current-voltage characteristics of the devices were measured in different modes (i. e., by feeding the current across the whole device, through each of the junctions, and through the middle Al film) at low temperatures (1.4-4.2 K). Specifically, the devices were tested in a transistor-like configuration to explore the influence of current injection through a SIN junction and the N film on the Josephson critical current and quasiparticle characteristic of the SINIS junction as a whole, and on the characteristics of the second junction.

Original languageEnglish (US)
Pages (from-to)129-132
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume15
Issue number2 PART I
DOIs
StatePublished - Jun 2005

Keywords

  • Josephson device fabrication
  • Josephson effect
  • Multilayers
  • Superconducting devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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