Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction

C. Bayram; M. Razeghi; D. J. Rogers; F. Hosseini Teherani

doi:10.1116/1.3116590

Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction

C. Bayram, M. Razeghi^*, D. J. Rogers, F. Hosseini Teherani

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Details of the fabrication and characterization of hybrid green light emitting diodes, composed of n -ZnO/(InGaN/GaN) multi-quantum-wells/ p -GaN on AlN/sapphire, are reported. Scanning electron microscope, atomic force microscopy, high resolution x-ray diffraction, and photoluminescence were used to study the hybrid device. The effects of solvents, annealing, and etching on n -ZnO are discussed. Successful hybridization of ZnO and (In)GaN into a green light emitting diode was realized.

Original language	English (US)
Pages (from-to)	1784-1788
Number of pages	5
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	27
Issue number	3
DOIs	https://doi.org/10.1116/1.3116590
State	Published - 2009

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.3116590

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title = "Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction",

abstract = "Details of the fabrication and characterization of hybrid green light emitting diodes, composed of n -ZnO/(InGaN/GaN) multi-quantum-wells/ p -GaN on AlN/sapphire, are reported. Scanning electron microscope, atomic force microscopy, high resolution x-ray diffraction, and photoluminescence were used to study the hybrid device. The effects of solvents, annealing, and etching on n -ZnO are discussed. Successful hybridization of ZnO and (In)GaN into a green light emitting diode was realized.",

author = "C. Bayram and M. Razeghi and Rogers, {D. J.} and Teherani, {F. Hosseini}",

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doi = "10.1116/1.3116590",

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pages = "1784--1788",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

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Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction. / Bayram, C.; Razeghi, M.; Rogers, D. J. et al.
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 27, No. 3, 2009, p. 1784-1788.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction

AU - Bayram, C.

AU - Razeghi, M.

AU - Rogers, D. J.

AU - Teherani, F. Hosseini

PY - 2009

Y1 - 2009

N2 - Details of the fabrication and characterization of hybrid green light emitting diodes, composed of n -ZnO/(InGaN/GaN) multi-quantum-wells/ p -GaN on AlN/sapphire, are reported. Scanning electron microscope, atomic force microscopy, high resolution x-ray diffraction, and photoluminescence were used to study the hybrid device. The effects of solvents, annealing, and etching on n -ZnO are discussed. Successful hybridization of ZnO and (In)GaN into a green light emitting diode was realized.

AB - Details of the fabrication and characterization of hybrid green light emitting diodes, composed of n -ZnO/(InGaN/GaN) multi-quantum-wells/ p -GaN on AlN/sapphire, are reported. Scanning electron microscope, atomic force microscopy, high resolution x-ray diffraction, and photoluminescence were used to study the hybrid device. The effects of solvents, annealing, and etching on n -ZnO are discussed. Successful hybridization of ZnO and (In)GaN into a green light emitting diode was realized.

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Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction

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