Fabrication and characterization of p-type double gate and single gate junctionless silicon nanowire transistor by atomic force microscopy nanolithography

INIS

• accumulation 16%
• atomic force microscopy 33%
• barriers 16%
• devices 16%
• doped materials 16%
• etching 66%
• fabrication 33%
• humidity 16%
• layers 16%
• nanowires 50%
• oxidation 16%
• oxides 16%
• potassium hydroxides 33%
• removal 33%
• resistors 16%
• sample preparation 16%
• silicon 66%
• speed 33%
• thickness 16%
• transistors 50%
• voltage 50%

Engineering

• Atomic Force Microscope 16%
• Current Drain 16%
• Drives 16%
• Electric Potential 16%
• Etching Process 16%
• Fabrication 33%
• Gate Voltage 33%
• Nanowire 50%
• Oxidation Reaction 33%
• Research 16%
• Resistor 16%
• Scan Speed 16%
• Temperature Time 16%
• Thickness 16%
• Transistor 50%

Material Science

• Atomic Force Microscopy 33%
• Characterization 16%
• Devices 16%
• Electrical Resistivity 16%
• Etching 33%
• Nanolithography 66%
• Oxide 16%
• Silicon 100%
• Silicon on Insulator 33%
• Wet Etching 16%