Fabrication and dc characteristics of vertically stacked sis-type structures for use as low-temperature detectors

I. P. Nevirkovets*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We discuss the fabrication and current-voltage characteristics (ivc) of Sn-(l-Sn)5 and Nb-AI-AIO-Nb)12 multilayer devices consisting of tunnel junctions stacked on top of one another. Three-terminal devices including a phonon and quasiparticle generator and both a single-junction (sj) and multijunction (MJ) detector based on tin structures have been fabricated, The mj detector showed better sensitivity to the same phonon irradiation-level compared with the sj detector. The result shows that the multijunction approach to low-temperature detector design is promising and might improve the energy resolution and sensitivity of detectors. For niobium-based structures, we have successfully employed a timed ion milling to define the area of devices.

Original languageEnglish (US)
Pages (from-to)575-578
Number of pages4
JournalSuperconductor Science and Technology
Volume8
Issue number7
DOIs
StatePublished - Jul 1995
Externally publishedYes

ASJC Scopus subject areas

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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